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Can Han

Researcher at Delft University of Technology

Publications -  40
Citations -  660

Can Han is an academic researcher from Delft University of Technology. The author has contributed to research in topics: Silicon & Passivation. The author has an hindex of 12, co-authored 28 publications receiving 421 citations. Previous affiliations of Can Han include Central South University & Nankai University.

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Improvement of the SiOx Passivation Layer for High-Efficiency Si/PEDOT:PSS Heterojunction Solar Cells

TL;DR: A simple and controllable wet oxidation treatment for developing the surface passivation layer, SiOx, on the Si surface for the fabrication of high-efficiency Si/poly(3,4-ethylene-dioxythiophene):polystyrenesulfonate (PEDOT:PSS) heterojunction solar cells showed better performance with a power conversion efficiency of 11%, representing a 28.96% enhancement from the PCE.
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Preparation and characterization of Sb2Se3 thin films by electrodeposition and annealing treatment

TL;DR: In this article, Antimony selenide (Sb2Se3) thin films were prepared on SnO2 coated glass substrates from acidic aqueous solution by potentiostatic electrodeposition and then post annealed at 300°C in Ar atmosphere.
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Inverted pyramidally-textured PDMS antireflective foils for perovskite/silicon tandem solar cells with flat top cell

TL;DR: In this article, a light management antireflective foil made from polydimethylsiloxane (PDMS) polymer carrying random-pyramidal textures with three different pyramid size ranges (1 −3 µm, 3 −8 µm and 8 −15 µm) was designed to boost light absorption.
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A review on the crystalline silicon bottom cell for monolithic perovskite/silicon tandem solar cells

TL;DR: In this article, the structural adjustment of the bottom cell based on the structural evolution of monolithic perovskite/silicon tandem solar cells to improve their performance is discussed.
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The role of heterointerfaces and subgap energy states on transport mechanisms in silicon heterojunction solar cells

TL;DR: In this article, the authors analyze the physical mechanisms driving the exchange of charge among SHJ layers with the support of rigorous numerical simulations that reasonably replicate experimental results and reveal that charge transport depends on the alignment and the nature of energy states at heterointerfaces.