At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.

Method of Manufacturing a Semiconductor Device

There are disclosed TFTs that have excellent characteristics and can be fabricated with a high yield. The TFTs are fabricated, using an active layer crystallized by making use of nickel. Gate electrodes are comprising tantalum. Phosphorus is introduced into source/drain regions. Then, a heat treatment is performed to getter nickel element in the active layer and to drive it into the source/drain regions. At the same time, the source/drain regions can be annealed out. The gate electrodes of tantalum can withstand this heat treatment.

Semiconductor device and method of fabricating same

An active matrix assembly for a liquid crystal display device utilizing an MIS (metal-insulator-semiconductor) transistor array is provided. The active matrix assembly includes a transparent substrate, a first thin layer of silicon disposed thereon, an insulating film on the first silicon layer and a second thin layer of silicon disposed on the insulating film. The layers are selectively etched for forming a gate and the silicon layers are doped for forming a MOS transistor for a display element of the device. The two silicon layers and insulating material intersect to form capacitors with the upper electrode of the storage capacitor being the driving electrode for the liquid crystal. An active matrix assembly constructed and arranged in accordance with the invention permits 90 percent or more of incident light coming from above to pass therethrough. Use of such a transparent substrate in an active matrix liquid crystal display device permits utilization of a transparent liquid crystal drive, such as the field effect type liquid crystal for providing a maximum degree of contrast. Operation of the device with peripheral drive circuits for the gate lines and data lines including non-inverting rationless shift registers formed in the same manner as the active matrix permits a substantial reduction in power consumption due to reduced parasitic capacitance.

Active matrix assembly for a liquid crystal display device including an insulated-gate-transistor

The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Method for fabricating a semiconductor device

A method of fabricating aluminum oxide films utilizing aluminum alkoxide precursors is described. The aluminum oxide film is formed by (a) providing an aluminum alkoxide precursor that is dissolved, emulsified or suspended in a liquid; (b) providing a vapor generated from the aluminum alkoxide precursor; and (c) depositing an aluminum oxide film on the substrate at a temperature greater than 500° C.

Method of film deposition, and fabrication of structures

A method for making a partially radiation hardened oxide adjacent an edge comprises forming an oxide layer on another layer with a temperature between about 975° C. and 1400° C., preferably between about 1000° C. and 1200° C. Then the structure of the oxide layer is damaged, such as by ion implantation, preferably with an inert element. Thereafter the oxide layer is annealed at a temperature between about 850° C. and 900° C., preferably at about 875° C.

Method for fabricating a radiation hardened oxide having structural damage

A method of making an improved aluminum oxide (sapphire) gate field effect transistor wherein the capacitance-voltage characteristic of the transistor is improved by annealing the aluminum oxide at a temperature less than the growth temperature of the aluminum oxide. A transistor annealed at a temperature less than the growth temperature is provided wherein the threshold voltage is the same as if the transistor were annealed at a temperature greater than the growth temperature; the capacitance-voltage characteristic of the transistor exhibiting markedly diminished hysteresis by annealing at a temperature less than the growth temperature.

Method of making a sapphire gate transistor

A novel process for improving the operation of silicon-on-sapphire devices by removing or minimizing edge current leakage. The reduction in leakage current is accomplished by subjecting the completed device to a sputtering operation and depositing thereon a layer of, for example, aluminum which is subsequently removed prior to scribing and dicing.

Carl W. Benyon

Papers

Method for fabricating a radiation hardened oxide having structural damage

Method of making a sapphire gate transistor

Method of reducing edge current leakage in N channel silicon-on-sapphire devices