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Showing papers by "Celeste Fleta published in 2014"


Journal ArticleDOI
TL;DR: In this paper, an ultra-thin 3D detector with a 10-μm-thick active region has been proposed to apply for microdosimetry in heavy ion therapy where the ion beam incidence is normal to the detector.
Abstract: An ultra-thin 3-D detector (U3DTHIN) with a 10- μm-thick active region has been proposed to apply for microdosimetry in heavy ion therapy where the ion beam incidence is normal to the detector. The advantage of the detector is that the detector substrate below the silicon-on-insulator layer has been etched away. Extremely small columnar 3-D electrodes allow the detector to be fully depleted at very low biases with a minimum dead region due to their size. In this paper, a charge collection study of the U3DTHIN detector carried out using an ion beam-induced charge collection (IBICC) technique is presented. The IBICC study utilized a microbeam of 5.5 MeV He2 + and 20 MeV 12C ions focused to approximately 1- μm diameter. Full charge collection was observed from a bias as low as -10 V. A comparison of the detector response when irradiated from the front and rear side is also presented.

9 citations



Patent
24 Apr 2014
TL;DR: In this paper, a method for depositing a layer of boron on a substrate by means of physical evaporation with an electron beam is described, characterised in that it comprises: a) producing a clean substrate that comprises a first adhesive layer, protecting the substrate, reaching a minimum vacuum of 5x10-6 mbar, d) heating the substrate to a minimum temperature of 115 DEG C, e) depositing 10B by EBPVD without there being any borons fragments smaller than 0.25 mm.
Abstract: The invention relates to a method for depositing a layer of boron on a substrate by means of physical evaporation with an electron beam, characterised in that it comprises: a) producing a clean substrate that comprises a first adhesive layer, b) protecting the substrate, c) reaching a minimum vacuum of 5x10-6 mbar, d) heating the substrate to a minimum temperature of 115 DEG C, e) depositing 10B by means of EBPVD without there being any boron fragments smaller than 0.25 mm and maintaining the evaporation cone focussed, f) depositing another adhesive layer on the 10B layer, and g) cooling the substrate where steps e) and f) are performed at least once to obtain a layer of boron with a thickness equal to or higher than 1 [mu][pi][iota]. The invention also relates to the product obtained by said method and to the use thereof as a neutron detector.