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Chandan Biswas
Researcher at Indian Statistical Institute
Publications - 56
Citations - 1727
Chandan Biswas is an academic researcher from Indian Statistical Institute. The author has contributed to research in topics: Graphene & Carbon nanotube. The author has an hindex of 17, co-authored 48 publications receiving 1442 citations. Previous affiliations of Chandan Biswas include Sungkyunkwan University & University of California, Los Angeles.
Papers
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Journal ArticleDOI
Layer-by-layer doping of few-layer graphene film.
Fethullah Güneş,Hyeon-Jin Shin,Hyeon-Jin Shin,Chandan Biswas,Gang Hee Han,Eun Sung Kim,Seung Jin Chae,Jae-Young Choi,Young Hee Lee +8 more
TL;DR: The sample shows better environmental stability due to the presence of dominant neutral Au atoms on the surface which was confirmed by angle-resolved X-ray photoelectron spectroscopy, which meets the technical target for industrial applications.
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Graphene Versus Carbon Nanotubes in Electronic Devices
Chandan Biswas,Young Hee Lee +1 more
TL;DR: In this paper, the authors reviewed the recent progresses of carbon nanotubes and graphene researches and compared their electronic properties and electric device performances, and highlighted the performance of devices that combine graphene and carbon-nanotubes.
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High Pseudocapacitance from Ultrathin V2O5 Films Electrodeposited on Self‐Standing Carbon‐Nanofiber Paper
Arunabha Ghosh,Eun Ju Ra,Meihua Jin,Hae Kyung Jeong,Tae Hyung Kim,Chandan Biswas,Young Hee Lee +6 more
TL;DR: In this paper, an ultrathin V2O5 layer was electrodeposited by cyclic voltammetry on a self-standing carbon-nanofiber paper, which was obtained by stabilization and heat-treatment of an electrospun polyacrylonitrile (PAN)-based nanofiber.
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Highly Interconnected Si Nanowires for Improved Stability Li‐Ion Battery Anodes
Hung T. Nguyen,Fei Yao,Mihai Robert Zamfir,Chandan Biswas,Kang Pyo So,Young Hee Lee,SeongMin Kim,SeungNam Cha,Jong Min Kim,Didier Pribat +9 more
TL;DR: In this article, a silicon nanowire growth strategy yielding highly interconnected specimens, which prevents them from being individually detached from the substrate, was presented, achieving a ∼ 100% charge retention after 40 cycles at C/2 rate, without charging voltage limitation.
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SiC formation on carbon nanotube surface for improving wettability with aluminum
Kang Pyo So,Jun Cheol Jeong,Jong Gil Park,Hyoen Ki Park,Yong Ho Choi,Dong Hwan Noh,Dong Hoon Keum,Hye Yun Jeong,Chandan Biswas,Chan Ho Hong,Young Hee Lee +10 more
TL;DR: In this paper, a SiC interface layer on the CNT surface was successfully formed by a three-step process: (i) mechanical crushing of a Si powder by a CNT promoter, (ii) coating of crushed Si nanoparticles onto CNT surfaces, and (iii) formation of SiC layer by high temperature annealing.