A semiconductor integrated circuit including: a first data hold circuit configured to hold an input signal from a first input terminal; a second data hold circuit configured to hold the input signal from the first input terminal and an input signal from a second input terminal; a gate circuit configured to input an output signal of the first data hold circuit and an output signal of the second data hold circuit and to output a signal corresponding to the output signals of the first and second data hold circuits when the output signals of the first and second data hold circuits are the same as each other; and a third data hold circuit configured to hold the output signal of either the gate circuit or the second data hold circuit, and outputs the output signal to an output terminal.

Semiconductor integrated circuit

A method and a electronic circuit, the method includes: sending to a switching circuit, to a state retention power gating (SRPG) circuit and to a first power source a control signal indicating that the SRPG circuit should operate in a functional mode; coupling, by the switching circuit, a third power grid to a first power grid; supplying power from the first power source to the SRPG circuit via the first power grid, the switching circuit and the third power grid; supplying power from a second power source to a second circuit via a second power grid; sending to the switching circuit, to the SRPG circuit and to the first power source a control signal indicating that the SRPG circuit should operate in a state retention mode; coupling, by the switching circuit, the third power grid to the second power grid; supplying power from the second power source to the SRPG circuit via the second power grid, the switching circuit and the third power grid; supplying power from the second power source to the second circuit via the second power grid; and storing, by the SRPG state information.

Electronic circuit and method for state retention power gating

An integrated circuit is disclosed for data retention with data migration. In an example aspect, the integrated circuit includes a logic block, a memory block, and retention control circuitry coupled to the logic and memory blocks. The logic block includes multiple retention-relevant storage devices to store first data and second data. The multiple retention-relevant storage devices include a first group of retention-relevant storage devices to store the first data and a second group of retention-relevant storage devices to store the second data. The memory block maintains memory data in the memory block during a retention operational mode. The retention control circuitry causes the retention-relevant storage devices of the second group to be activated into multiple scan chains and also migrates the second data between the second group and the memory block using the multiple scan chains to accommodate transitions between the retention operational mode and a regular operational mode.

Data retention with data migration

A novel semiconductor device and a method of driving the semiconductor device. A (volatile) node in which data that is rewritten as appropriate by arithmetic processing is held and a node in which the data is stored are electrically connected to each other via a source and a drain of a transistor in which a channel is formed in an oxide semiconductor layer. Then, data and data obtained by inverting the data (inverted data) are stored before supply of power source voltage is stopped, and the two inputs (data) are compared after restart of supply of the power source voltage, so that data obtained by arithmetic processing just before the supply of the power source voltage is stopped is restored.

Semiconductor device and method of driving semiconductor device

A semiconductor device includes a power gating circuit including a synchronous reset flip-flop, a retention circuit including a retention flip-flop, a clock management circuit configured to provide an operation clock to the power gating circuit and the retention circuit, and a power management circuit configured to transmit a power gating control signal to the power gating circuit, the retention circuit, and the clock management circuit. The power gating circuit is activated to signal entry to a power reduction mode. The retention circuit retains states of the semiconductor device. Upon exit from the power reduction mode, the power management circuit is configured to complete a reset operation of the power gating circuit before signaling the retention circuit to cancel a retention state and restore the states of the semiconductor device.

Semiconductor device and a method of operating the same

A flip-flop includes a functional latch and a retention latch. The functional latch is configured to maintain a logic state of the flip-flop in a power-up mode and the retention latch is configured to maintain the logic state of the flip-flop in a power-down mode. The retention latch is selectively coupled to the functional latch and the retention latch is configured to maintain the logic state in the power-down mode irrespective of a level of an associated clock signal when the power-down mode is entered. A clock pulse that clocks the flip-flop is derived from the associated clock signal.

Charles A. Cornell

Papers

Pulsed state retention power gating flip-flop