Journal of Applied physics,Vol.33 : 1962年に発表されたレオロジー関連の論文

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Review of technology for normally-off HEMTs with p-GaN gate

Recent Advances in GaN‐Based Power HEMT Devices

Owing to its exceptional physical and electronic properties, gallium nitride (GaN) is a promising material that can find application in the fields of high-power and high-frequency electronics. However, there are still several hurdles in GaN technology, which hinder the full exploitation of the great potential of this material. For that reason the scientific community working on GaN-based materials is continuously involved in addressing a variety of physical and technological problems encountered in the fabrication of GaN devices. This paper aims to give an overview on some selected scientific problems related to GaN technology for power electronics devices, with a special attention to the case of high electron mobility transistors (HEMTs). In particular, after an introduction on the fundamental physical properties of the material, special emphasis is given to the problem of current transport at metal/GaN interfaces, considering both Ohmic and Schottky contacts. Afterwards, the importance of dielectrics either as passivation or gate insulation layers is briefly highlighted. Then, the possible approaches to control the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures and to fabricate normally-OFF HEMTs are presented. Finally, a short description of the status of vertical GaN devices technology is given.

Physics and technology of gallium nitride materials for power electronics

Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing

The bipolar resistive switching characteristics of the Pt/ZnO/Pt resistive random access memory (RRAM) had been investigated. This work introduced UV-Ozone treatment to improve the interface quality between ZnO thin film and Pt electrode. We found that UV-Oznoe can help to clean the surface of Pt electrode and provide superior surface morphology for the subsequent sputtering ZnO thin film deposition. According the experiment result, the Pt/ZnO/Pt RRAM demonstrated better on-off current ratio and the excellent retention time after UV-Ozone treatment.

Cheng-Wei Chou

Papers

Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing

Performance enhancement of Pt/ZnO/Pt resistive random access memory (RRAM) with UV-Ozone treatment