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Advances in 4D Printing: Materials and Applications

Intrinsically stretchable conductors have undergone rapid development in the past few years and a variety of strategies have been established to improve their electro-mechanical properties. However, ranging from electronically to ionically conductive materials, they are usually vulnerable either to large deformation or at high/low temperatures, mainly due to the fact that conductive domains are generally incompatible with neighboring elastic networks. This is a problem that is usually overlooked and remains challenging to address. Here, we introduce synergistic effect between conductive zwitterionic nanochannels and dynamic hydrogen-bonding networks to break the limitations. The conductor is highly transparent (>90% transmittance), ultra-stretchable (>10,000% strain), high-modulus (>2 MPa Young’s modulus), self-healing, and capable of maintaining stable conductivity during large deformation and at different temperatures. Transparent integrated systems are further demonstrated via 3D printing of its precursor and could achieve diverse sensory capabilities towards strain, temperature, humidity, etc., and even recognition of different liquids. To realize the potential of stretchable conductors for next-generation applications, the compatibility between the conductive and elastic material phases must be improved. Here, the authors report a stretchable conductor with molecular synergy between its conductive and stretchable components.

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A highly transparent and ultra-stretchable conductor with stable conductivity during large deformation.

Additive manufacturing (AM) has gained significant attention due to its ability to drive technological development as a sustainable, flexible, and customizable manufacturing scheme. Among the various AM techniques, direct ink writing (DIW) has emerged as the most versatile 3D printing technique for the broadest range of materials. DIW allows printing of practically any material, as long as the precursor ink can be engineered to demonstrate appropriate rheological behavior. This technique acts as a unique pathway to introduce design freedom, multifunctionality, and stability simultaneously into its printed structures. Here, a comprehensive review of DIW of complex 3D structures from various materials, including polymers, ceramics, glass, cement, graphene, metals, and their combinations through multimaterial printing is presented. The review begins with an overview of the fundamentals of ink rheology, followed by an in‐depth discussion of the various methods to tailor the ink for DIW of different classes of materials. Then, the diverse applications of DIW ranging from electronics to food to biomedical industries are discussed. Finally, the current challenges and limitations of this technique are highlighted, followed by its prospects as a guideline toward possible futuristic innovations.

Direct Ink Writing: A 3D Printing Technology for Diverse Materials

3D printed microfluidics and microelectronics

Radio-frequency (RF) electronics, which combine passive electromagnetic devices and active transistors to generate and process gigahertz (GHz) signals, provide a critical basis of ever-pervasive wireless networks. While transistors are best realized by top-down fabrication, relatively larger electromagnetic passives are within the reach of printing techniques. Here, direct writing of viscoelastic silver-nanoparticle inks is used to produce a broad array of RF passives operating up to 45 GHz. These include lumped devices such as inductors and capacitors, and wave-based devices such as transmission lines, their resonant networks, and antennas. Moreover, to demonstrate the utility of these printed RF passive structures in active RF electronic circuits, they are combined with discrete transistors to fabricate GHz self-sustained oscillators and synchronized oscillator arrays that provide RF references, and wireless transmitters clocked by the oscillators. This work demonstrates the synergy of direct ink writing and RF electronics for wireless applications.

Gigahertz Electromagnetic Structures via Direct Ink Writing for Radio-Frequency Oscillator and Transmitter Applications.

2D semiconductors, especially transition metal dichalcogenide (TMD) monolayers, are extensively studied for electronic and optoelectronic applications. Beyond intensive studies on single transistors and photodetectors, the recent advent of large-area synthesis of these atomically thin layers has paved the way for 2D integrated circuits, such as digital logic circuits and image sensors, achieving an integration level of ≈100 devices thus far. Here, a decisive advance in 2D integrated circuits is reported, where the device integration scale is increased by tenfold and the functional complexity of 2D electronics is propelled to an unprecedented level. Concretely, an analog optoelectronic processor inspired by biological vision is developed, where 32 × 32 = 1024 MoS2 photosensitive field-effect transistors manifesting persistent photoconductivity (PPC) effects are arranged in a crossbar array. This optoelectronic processor with PPC memory mimics two core functions of human vision: it captures and stores an optical image into electrical data, like the eye and optic nerve chain, and then recognizes this electrical form of the captured image, like the brain, by executing analog in-memory neural net computing. In the highlight demonstration, the MoS2 FET crossbar array optically images 1000 handwritten digits and electrically recognizes these imaged data with 94% accuracy.

An Atomically Thin Optoelectronic Machine Vision Processor.

A memory device having a plurality of voltage regions and a method of operating the same are provided. The memory device includes a memory cell array, a data path region including data processing blocks transmitting read/write data from/to the memory cell array during read/write operations, and a control signal path region including control blocks controlling the data processing blocks during the read/write operations. The data path region selectively receives a first high power voltage or a first low power voltage in accordance with an operating mode of the memory device. The control signal path region receives the first high power voltage regardless of the operating mode.

Chengye Liu

Papers

Gigahertz Electromagnetic Structures via Direct Ink Writing for Radio-Frequency Oscillator and Transmitter Applications.

An Atomically Thin Optoelectronic Machine Vision Processor.

Nonvolatile memory device and operating method of the same