Showing papers by "Cheol-Su Kim published in 2004"
TL;DR: In this article, the forming gas annealing effect on the ferroelectric properties of PLT thin films has been investigated and the degradation of leakage current density was shown to be strongly influenced by the anneal process.
Abstract: Dielectric thin films of (Pb 0.72 La 0.28 )Ti 0.93 O 3 (PLT(28)) have been deposited on Pt(1 1 1)/Ti/SiO 2 /Si(1 0 0) substrates in situ by pulsed laser deposition using different annealing and deposition parameters. The forming gas annealing effect on the ferroelectric properties of PLT thin films has been investigated. The diffusion of hydrogen into the ferroelectric film was caused by annealing process and resulted in the destruction of polarization. Structural and electrical properties including dielectric constant, ferroelectric characteristics, and leakage current characteristics of PLT thin films were shown to be strongly influenced by annealing process. The film deposited by using two-step process and annealed in oxygen gas shows a strong (1 1 1) orientation. However, oxygen-deficient Ti 6 O 11 (or Ti 6 O 12− δ ) is clearly observed in the capacitor after forming gas annealing. The film annealed in the forming gas shows the degradation of leakage current density than the film annealed in oxygen gas. Also, the diffusion of hydrogen into the ferroelectric film was resulted in the destruction of polarization.
10 citations
TL;DR: In this article, the effect of various parameters, such as substrate temperatures (450-650°C), energy densities (1.5-4 J/cm 2 ) and annealing time (5-30 min), on the property of PZT thin film was systematically investigated.
Abstract: Thin films of phase-pure perovskite Pb(Zr 0.53 Ti 0.47 )O 3 (PZT) were fabricated in situ onto Pt/Ti/SiO 2 /Si substrates by pulsed laser deposition (PLD) using a Nd:YAG laser. We have systematically investigated the effect of various parameters, such as substrate temperatures (450–650 °C) and energy densities (1.5–4 J/cm 2 ) and annealing time (5–30 min), on the property of PZT thin film. X-ray diffraction (XRD), scanning electron microscope (SEM), C – V measurement and hysteresis were used to investigate the electrical, micro structural properties of the thin films. At the optimized deposition condition, remnant polarization, coercive electric field and dielectric constant of the film were 31.5 μC/cm 2 , 50.5 kV/cm and 930, respectively.
5 citations