A CMOS-compatible graphene/silicon-heterostructure photodetector formed by integrating graphene onto a silicon optical waveguide on silicon-on-insulator and operating in the near- and mid-infrared regions is demonstrated. A responsivity as high as 0.13 A W−1 is obtained at a bias of 1.5 V for 2.75-μm light at room temperature.

High-responsivity graphene/silicon-heterostructure waveguide photodetectors

Periodic structures with a sub-wavelength pitch have been known since Hertz conducted his first experiments on the polarization of electromagnetic waves. While the use of these structures in waveguide optics was proposed in the 1990s, it has been with the more recent developments of silicon photonics and high-precision lithography techniques that sub-wavelength structures have found widespread application in the field of pho- tonics. This review first provides an introduction to the physics of sub-wavelength structures. An overview of the applications of sub-wavelength structures is then given including: anti-reflective coatings, polarization rotators, high-efficiency fiber-chip cou- plers, spectrometers, high-reflectivity mirrors, athermal waveg- uides, multimode interference couplers, and dispersion engi- neered, ultra-broadband waveguide couplers among others. Particular attention is paid to providing insight into the design strategies for these devices. The concluding remarks provide an outlook on the future development of sub-wavelength structures and their impact in photonics.

https://onlinelibrary.wiley.com/doi/pdf/10.1002/lpor.201400083

Waveguide sub-wavelength structures: a review of principles and applications

Owing to their atomic layer thickness, strong light–material interaction, high nonlinearity, broadband optical response, fast relaxation, controllable optoelectronic properties, and high compatibility with other photonic structures, 2D materials, including graphene, transition metal dichalcogenides and black phosphorus, have been attracting increasing attention for photonic applications. By tuning the carrier density via electrical or optical means that modifies their physical properties (e.g., Fermi level or nonlinear absorption), optical response of the 2D materials can be instantly changed, making them versatile nanostructures for optical modulation. Here, up-to-date 2D material-based optical modulation in three categories is reviewed: free-space, fiber-based, and on-chip configurations. By analysing cons and pros of different modulation approaches from material and mechanism aspects, the challenges faced by using these materials for device applications are presented. In addition, thermal effects (e.g., laser induced damage) in 2D materials, which are critical to practical applications, are also discussed. Finally, the outlook for future opportunities of these 2D materials for optical modulation is given.

2D Materials for Optical Modulation: Challenges and Opportunities.

2D Layered Materials: Synthesis, Nonlinear Optical Properties, and Device Applications

Abstract The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2–20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

/pdf/mid-infrared-integrated-photonics-on-silicon-a-perspective-31psns51w2.pdf

Mid-infrared integrated photonics on silicon: a perspective

Theoretical and experimental studies of mid-infrared (mid-IR) suspended membrane waveguide (SMW) and suspended membrane ring (SMR) resonator are presented. An array of periodical holes beside the rib waveguide facilitates the local removal of buried oxide to form suspended membrane devices on silicon-on-insulator (SOI). The waveguide design is optimized in terms of hole size, etch depth, and bend radius to minimize device strain and optical loss. We calculate waveguide dimension to attain the wide low-dispersion ( $\pm$ 100 ps/nm/km) bandwidth for the wavelength range from 2.0 to 8.0 $\mu \hbox{m}$ , and optical nonlinearity is also studied. The SMWs are fabricated on a commercial SOI wafer and characterized by an $\hbox{Er}^{3+} - \hbox{Pr}^{3+}$ codoped fiber laser at 2.75 $\mu\hbox{m}$ . Negligible bending losses are measured for a 40- $\mu\hbox{m}$ radius bend. The minimum waveguide loss of 3.0 $\pm$ 0.7 dB/cm is measured experimentally. The SMR resonator has a quality factor ( $Q$ ) of $\sim$ 10 000 and an extinction ratio of $\sim$ 13 dB in near-IR. In mid-IR, the resonator has a $Q$ of $\sim$ 8100.

Mid-infrared Suspended Membrane Waveguide and Ring Resonator on Silicon-on-Insulator

A mid-infrared (mid-IR)-focusing subwavelength grating (SWG) coupler and suspended membrane waveguide (SMW) on a silicon-on-insulator wafer are studied. For a transverse-electric mode uniform SWG, finite-difference time-domain simulation predicts 44.2% coupling efficiency with 1 dB bandwidth of about 220 nm and backreflection of 0.78% at 2.75 μm. Then the uniform SWG is curved to a focusing SWG using a phase-matching formula. The SMWs are analyzed by the finite element method and fabricated. An Er3+-Pr3+ co-doped mid-IR fiber laser is used for device characterization. The fabricated mid-IR SWG coupler has 24.7% coupling efficiency.

Focusing subwavelength grating coupler for mid-infrared suspended membrane waveguide.

A quasi-two-dimensional layer of MoS2 was placed on top of a silicon optical waveguide to form a MoS2–silicon hybrid structure. Chirped pulse self-phase modulation measurements were carried out to determine the optical Kerr nonlinearity of the structure. The observed increase in the spectral broadening of the optical pulses in the MoS2–silicon waveguide compared with the silicon waveguides indicated that the third-order nonlinear effect in MoS2 is about 2 orders of magnitude larger than that in silicon. The measurements show that MoS2 has an effective optical Kerr coefficient of about 1.1×10−16  m2/W. This work reveals the potential application of MoS2 to enhance the nonlinearity of hybrid silicon optical devices.

Enhanced optical Kerr nonlinearity of MoS 2 on silicon waveguides

We demonstrate an apodized focusing subwavelength grating (SWG) for suspended membrane waveguides on silicon-on-insulator. Finite-difference time-domain simulation predicts −1.7 dB coupling efficiency and a 3 dB bandwidth of ∼50 nm for the transverse-magnetic mode apodized SWG, which has 98% field overlap with propagation mode in the single mode fiber. A modified phase matching formula is proposed to design the focusing apodized SWG. Better than −3.0 dB coupling efficiency and a 3 dB optical bandwidth of ∼50 nm is demonstrated experimentally.

Apodized focusing subwavelength grating couplers for suspended membrane waveguides

Theoretical and experimental results of mid-infrared (mid-IR) gratings for coupling between transverse-electric (TE)/transverse-magnetic (TM) mode silicon-on-sapphire (SOS) waveguides and zirconium, barium, lanthanum, aluminum, and sodium fluoride (ZBLAN) fibers are presented. The shallow-etched uniform grating, full-etched subwavelength grating, and apodized grating are analyzed theoretically. TE mode shallow-etched apodized gratings with coupling efficiency of 80.6% and TM mode full-etched apodized subwavelength gratings with coupling efficiency of 39.6% are predicted at the wavelength of 2.75 by finite-difference time-domain (FDTD) simulation. An co-doped ZBLAN fiber laser is set up to be used as a mid-IR light source at 2.75 . Coupling efficiencies of 32.6% and 11.6% to TE mode and TM mode SOS waveguides, respectively, were obtained experimentally with uniform grating couplers. The dependence of coupling efficiency on etch depth, grating period, fill factor, and incident angle are also studied.

Chi Yan Wong

Papers

Mid-infrared Suspended Membrane Waveguide and Ring Resonator on Silicon-on-Insulator

Focusing subwavelength grating coupler for mid-infrared suspended membrane waveguide.

Enhanced optical Kerr nonlinearity of MoS 2 on silicon waveguides

Apodized focusing subwavelength grating couplers for suspended membrane waveguides

Mid-Infrared Grating Couplers for Silicon-on-Sapphire Waveguides