C
Chia-Sheng Hsu
Researcher at Georgia Institute of Technology
Publications - 9
Citations - 55
Chia-Sheng Hsu is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Capacitance & Dielectric. The author has an hindex of 2, co-authored 8 publications receiving 21 citations.
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Journal ArticleDOI
Understanding the Switching Mechanisms of the Antiferromagnet/Ferromagnet Heterojunction.
Yu-Ching Liao,Dmitri E. Nikonov,Sourav Dutta,Sou-Chi Chang,Chia-Sheng Hsu,Ian A. Young,Azad Naeemi +6 more
TL;DR: This work has developed a comprehensive modeling framework to understand the fundamental physics of the switching mechanisms of the antiferromagnets/ferromagnet heterojunction by taking BiFeO3/CoFe heterojunctions as an example, and demonstrates that the fundamental limit of the switched time is in the subnanosecond regime.
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Performance Analysis and Enhancement of Negative Capacitance Logic Devices Based on Internally Resistive Ferroelectrics
TL;DR: In this article, a comprehensive performance analysis of ferroelectric (FE)-based logic gates and repeaters is presented, including the proper circuit initialization, the negative capacitance effect on leakage currents, and the impacts of the FE viscosity coefficient.
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A Theoretical Study of Multidomain Ferroelectric Switching Dynamics With a Physics-Based SPICE Circuit Model for Phase-Field Simulations
TL;DR: In this paper, the multidomain nature of ferroelectric (FE) polarization switching dynamics in a metal-ferroelectric-metal (MFM) capacitor is explored through a physics-based phase-field approach, where the 3-D time-dependent Ginzburg-Landau (TDGL) equation and Poisson's equation are selfconsistently solved with the SPICE simulator.
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Evaluating the Performances of the Ultralow Power Magnetoelectric Random Access Memory With a Physics-Based Compact Model of the Antiferromagnet/Ferromagnet Bilayer
TL;DR: In this article , a physics-based compact model of the antiferromagnet/ferromagnetic bilayer was developed to evaluate the potential performance of the magnetoelectric magnetic random access memory (ME-MRAM) using the bismuth ferrite (BFO)/CoFe heterojunction.
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Hysteresis-Free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges
TL;DR: In this article, the authors present a physical interpretation of the hysteresis-free charge-boost effect observed experimentally in metal-ferroelectric-insulator-metal ($M$-$F$-$I$-$M$) capacitors.