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Chiaki Sasaoka
Researcher at NEC
Publications - 59
Citations - 1032
Chiaki Sasaoka is an academic researcher from NEC. The author has contributed to research in topics: Nitride & Layer (electronics). The author has an hindex of 16, co-authored 54 publications receiving 1000 citations. Previous affiliations of Chiaki Sasaoka include Renesas Electronics.
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Patent
Group-III nitride semiconductor device
TL;DR: In this article, a non-crystal layer of a nitride-based compound semiconductor is formed and at least a part of the non-core layer is then etched to form a partially etched non-crosstalked layer before the partially-electric layer is crystallized.
Journal ArticleDOI
Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
Masaru Kuramoto,Chiaki Sasaoka,Yukihiro Hisanaga,Akitaka Kimura,Atsushi Yamaguchi,Haruo Sunakawa,Naotaka Kuroda,Masaaki Nido,Akira Usui,Masashi Mizuta +9 more
TL;DR: In this article, continuous-wave operation at room-temperature has been demonstrated for InGaN multi-quantum-well (MQW) laser diodes (LDs) grown on low-dislocation-density n-GaN substrates with a backside n-contact.
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Novel Ridge-Type InGaN Multiple-Quantum-Well Laser Diodes Fabricated by Selective Area Re-Growth on n-GaN Substrates
TL;DR: In this article, a ridge structure fabricated by selective-area epitaxial re-growth is proposed for InGaN multiple-quantum-well (MQW) laser diodes.
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High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy
TL;DR: In this paper, a low-dislocation-density thick GaN layer was successfully grown using selective-area HVPE growth combined with epitaxial lateral overgrowth, which showed superior optical properties compared with that on a sapphire substrate.
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Reduction of Internal Loss and Threshold Current in a Laser Diode with a Ridge by Selective Re-Growth (RiS-LD)
TL;DR: The origin of the internal loss in ridge-type laser diodes fabricated using selective re-growth is investigated through a systematic device characterization and additional optical measurements in this article, where the authors found that internal loss of this LD is mainly caused by the absorptive'layers at the regrowth boundary and Mg-doped GaN layer.