A
Akira Sakai
Researcher at Osaka University
Publications - 371
Citations - 7299
Akira Sakai is an academic researcher from Osaka University. The author has contributed to research in topics: Epitaxy & Dislocation. The author has an hindex of 39, co-authored 361 publications receiving 7028 citations. Previous affiliations of Akira Sakai include NEC & Nagoya University.
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Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
TL;DR: In this article, GaN layers with a dislocation density as low as 6×107 cm-2 were grown on 2-inch-diameter sapphire wafers.
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Defect structure in selectively grown GaN films with low threading dislocation density
TL;DR: In this article, defect structures in GaN films grown selectively in hydride vapor-phase epitaxy (HVPE) were characterized by transmission electron microscopy (TEM) defect structures.
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High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems
Keisuke Kobayashi,Makina Yabashi,Yasutaka Takata,Takashi Tokushima,Shik Shin,Kenji Tamasaku,Daigo Miwa,Tetsuya Ishikawa,Hiroshi Nohira,Takeshi Hattori,Y. Sugita,Osamu Nakatsuka,Akira Sakai,Shigeaki Zaima +13 more
TL;DR: In this paper, high-resolution x-ray photoelectron spectroscopy (XPS) at 6 keV photon energy has been realized utilizing high-flux-density x rays from the third generation high-energy synchrotron radiation facility, SPring-8.
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Transmission electron microscopy of defects in gan films formed by epitaxial lateral overgrowth
TL;DR: In this paper, transmission electron microscopy (TEM) defect morphology and structure in GaN films formed using an epitaxial lateral overgrowth (ELO) technique on SiO2-mask/window-stripe-patterned GaN layers in hydride vapor phase epitaxy were thoroughly examined.
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Ge growth on Si using atomic hydrogen as a surfactant
Akira Sakai,Toru Tatsumi +1 more
TL;DR: In this article, the effect of adsorbed atomic hydrogen (H) on the evolution of Ge films on Si(001) and (111) substrates in solid-source molecular beam epitaxy was examined.