A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

Gas Supply Manifold And Method Of Supplying Gases To Chamber Using Same

A gas distribution system, a reactor system including the gas distribution system, and method of using the gas distribution system and reactor system are disclosed. The gas distribution system can be used in gas-phase reactor systems to independently fine tune gas source locations and gas flow rates of reactants to a reaction chamber of the reactor systems.

Gas distribution system, reactor including the system, and methods of using the same

An improved exhaust system for a gas-phase reactor and a reactor and system including the exhaust system are disclosed. The exhaust system includes a channel fluidly coupled to an exhaust plenum. The improved exhaust system allows operation of a gas-phase reactor with desired flow characteristics while taking up relatively little space within a reaction chamber.

Gas-phase reactor and system having exhaust plenum and components thereof

A system and method for providing intermediate reactive species to a reaction chamber are disclosed. The system includes an intermediate reactive species formation chamber fluidly coupled to the reaction chamber to provide intermediate reactive species to the reaction chamber. A pressure control device can be used to control an operating pressure of the intermediate reactive species formation chamber, and a heater can be used to heat the intermediate reactive species formation chamber to a desired temperature.

Method and system for in situ formation of gas-phase compounds

Showerhead assemblies, gas distribution plates, and systems including the same are disclosed. Exemplary showerhead assemblies include a gas distribution plate. Exemplary gas distribution plates include apertures designed to direct a flow of gas and to reduce stagnation of gas on surfaces of the plates.

Showerhead assembly and components thereof

A representative semiconductor device includes a first dielectric layer overlying a substrate, at least a first opening in the first dielectric layer, a conformal dense layer lining the at least first opening in the first dielectric layer, a barrier layer overlying the conformal dense layer, a conductive feature in the at least first opening, where a portion of the first dielectric layer between any two adjacent conductive features is removed to form a second opening, the second opening exposing the conformal dense layer between the two adjacent conductive features, and a second dielectric layer having an air gap formed therein, the second dielectric layer disposed between the two adjacent conductive features.

Chih-Chien Chi

Papers

Interconnect Structure Having Air Gap and Method of Forming the Same