The zinc oxide thin films, highly transparent, doped aluminium were prepared on glass substrates by the reactive chemical spray method. The incorporation nature of Al atoms in the ZnO lattice was determined by X-ray diffraction and optical analyses. Indeed, for low doping ⩽2%, the results of X-ray spectra analysis show a simultaneous reduction of lattice parameters (a and c), this variation, which follows VEGARD’s law, tends to indicate a substitution of Zn by Al. By against for doping >2% the increase in the lattice parameters thus the grain sizes, in accordance with the VEGARD’s law can be explained by occupation of the interstitial sites by Al atoms. Beyond 4%, the material tends to get disorderly and the crystallites orientation is random. The studied optical properties show that the variation of the optical gap follows a law of the x3/2 form for x

Site location of Al-dopant in ZnO lattice by exploiting the structural and optical characterisation of ZnO:Al thin films

Effect of substrate temperature on transparent conducting Al and F co-doped ZnO thin films prepared by rf magnetron sputtering

Al-doped flower-like ZnO nanostructures have been synthesized by a facile hydrothermal method at 95 °C for 7 h. The structure and morphology of the product were characterized by XRD, FTIR and SEM analysis. The sensing tests reveal that the response is significantly enhanced by Al doping, and the 0.3 wt% Al-doped sample exhibits the highest response of 464 to 10 ppm CO at an operating temperature of 155 °C. A change of the structural defects in Al-doped ZnO is responsible for the enhancement of the sensing properties, which has been confirmed by the room temperature photoluminescence (PL) spectra and X-ray photoelectron spectroscopy (XPS). The response time is reduced disproportionately with the increase in CO concentration by modeling the transient responses of the sensor using the Langmuir–Hinshelwood reaction mechanism. The band structures and density of states for pure ZnO and Al-doped supercells have been calculated using first principles based on density functional theory (DFT). The calculated results show that the band gap is narrowed and the conductance is increased by Al doping, which coincides with the experimental results of gas sensing.

Mechanism enhancing gas sensing and first-principle calculations of Al-doped ZnO nanostructures

https://cyberleninka.org/article/n/142692.pdf

High mobility hydrogenated zinc oxide thin films

Uniform hamburger-like mesoporous carbon-incorporated ZnO (MC-ZnO) nanoarchitectures were facilely prepared by a simple, economical and environmentally benign solvothermal method using ethylene glycol (EG) as solvent in the presence of glucose. The as-obtained samples possessed a high surface area of 104 m2 g−1 and narrow pore size distribution around 7.2 nm. The adsorption behavior of Congo red (CR) onto the products fitted well the Langmuir isotherm and the adsorption process followed the pseudo-second-order kinetic model. The maximum adsorption capacity of CR as 162 mg g−1 was achieved by Langmuir equation, while only 18.8 mg g−1 was found for by commercial ZnO nanoparticles. Furthermore, the as-prepared nanoarchitectures exhibited enhanced photocatalytic activity for the decolorization of photosensitized dyes (CR and rhodamine-B) under visible-light illumination. Therefore, the MC-ZnO nanoarchitectures developed in this work may be a promising potential material for wastewater treatment.

Uniform hamburger-like mesoporous carbon-incorporated ZnO nanoarchitectures: One-pot solvothermal synthesis, high adsorption and visible-light photocatalytic decolorization of dyes

article i nfo Al-doped ZnO (AZO) thin films were prepared on glass substrates by radio-frequency magnetron sputtering at deposition temperatures ranging from room temperature (RT) to 300 °C for transparent electrode applications. This study investigates the effects of H2 plasma treatment on structural, electrical, and optical properties of AZO thin films. Plasma treatment was conducted at 300 °C using a plasma-enhanced chemical vapor deposition system for potential large size substrate applications. The crystal structure of plasma treated AZO films did not change considerably, but the surface roughness and surface grain size increased slightly. Improvement in electrical properties was strongly dependent on the deposition temperature. When the depositiontemperaturerangedfrom300 °CtoRT,theresistivityofplasmatreated filmsdecreasedsignificantly by 22.7% to 97.6%, and the optical bandgap broadened by 0.011 to 0.076 eV.

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Effects of H2 plasma treatment on properties of ZnO:Al thin films prepared by RF magnetron sputtering

http://www.ioe.nchu.edu.tw/Pic/Writings/2738_Wang-CAP2011v11pS12-Influence%20of%20hydrogen%20plasma%20treatment%20on%20AZO%20%20for%20solar%20cells.pdf

Chih-Chung Tseng

Papers

Effects of H2 plasma treatment on properties of ZnO:Al thin films prepared by RF magnetron sputtering

Influence of hydrogen plasma treatment on Al-doped ZnO thin films for amorphous silicon thin film solar cells