F
Fang-Hsing Wang
Researcher at National Chung Hsing University
Publications - 73
Citations - 1001
Fang-Hsing Wang is an academic researcher from National Chung Hsing University. The author has contributed to research in topics: Thin film & Sputter deposition. The author has an hindex of 14, co-authored 61 publications receiving 820 citations. Previous affiliations of Fang-Hsing Wang include Soochow University (Suzhou).
Papers
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Influence of thickness and annealing temperature on the electrical, optical and structural properties of AZO thin films
TL;DR: The structural, electrical, and optical properties of transparent conductive al-doped ZnO (AZO) thin films have been analyzed as a function of the thickness and the annealing temperature by a series of characterization techniques.
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Effect of substrate temperature on transparent conducting Al and F co-doped ZnO thin films prepared by rf magnetron sputtering
Fang-Hsing Wang,Chiao-Lu Chang +1 more
TL;DR: In this article, a composite ceramic ZnO target containing 1.5% ZnF 2 and 1.1% Al 2 O 3 was prepared and used to deposit transparent conducting Al and F co-doped zinc oxide (AFZO) thin films on glass substrates by radio frequency magnetron sputtering.
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Effects of H2 plasma treatment on properties of ZnO:Al thin films prepared by RF magnetron sputtering
TL;DR: In this article, the effects of H2 plasma treatment on structural, electrical, and optical properties of al-doped ZnO (AZO) thin films were investigated on glass substrates by radiofrequency magnetron sputtering at deposition temperatures ranging from room temperature (RT) to 300 °C for transparent electrode applications.
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Influence of hydrogen plasma treatment on Al-doped ZnO thin films for amorphous silicon thin film solar cells
TL;DR: In this paper, the effects of H 2 plasma treatment on characteristics of Al-doped ZnO (AZO) thin films prepared by RF magnetron sputter at 200°C for amorphous silicon (α-Si) thin film solar cell fabrication were investigated.
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Effects of thickness and annealing on the properties of Ti-doped ZnO films by radio frequency magnetron sputtering
TL;DR: In this paper, the structural, electrical, and optical properties of TZO thin films were investigated with respect to the variation of film thickness and annealing condition, showing that the films were hexagonal wurtzite structure and showed a good c-axis orientation perpendicular to the substrate.