Chih-Hsiang Yang

TL;DR: In this article, the antireflective coatings (ARCs) of composite silicon dioxide-titanium dioxide (SiO2-TiO2) films are applied to multicrystalline silicon cells to increase the incident light trapped within the device.

TL;DR: It is indicated that the in situ remote plasma pretreatment of Si substrate can result in the formation of better SiO2, resulting in a better chemical passivation, and improve the lifetime of c-Si to up to 67 μs.

TL;DR: An ultrafast, non-vacuum spatial ALD with the deposition rate of around 10 nm/min, developed by the group, is hired to deposit Al2O3 films and shows an obvious gain in open-circuit voltage (Voc) and short-circuits current (Jsc) because of the increased minority carrier lifetime and internal rear-side reflectance, respectively.

TL;DR: In this article, the rear-side surface of passivated emitter and rear cells were prepared using a self-developed spatial atomic layer deposition system, and various rear side surface morphologies were obtained through different etching treatments.

TL;DR: Although the fill factor of the PS opening technique is lower owing to non-optimized distribution of the openings, the conversion efficiency of the devices is comparable to that of devices prepared via the laser opening process.