Although conventional electromechanical circuit breakers have a proven record as effective and reliable devices for circuit protection, emerging power distribution technologies and architectures, such as dc microgrids, require improved interruption performance characteristics (eg, faster switching speed) The need for faster switching operation, in combination with the latest developments of advanced power semiconductor technologies, has spurred an increase in the research and development in the area of solid-state circuit breakers This article provides a comprehensive review of various solid-state circuit breaker technologies that have been reported in the literature during recent years First, we categorize solid-state circuit breakers based on key features and subsystems, including power semiconductor devices, main circuit topologies, voltage clamping methods, gate drivers, fault detection methods, and commutation methods for power semiconductor devices Second, we discuss the various challenges associated with the design of solid-state circuit breakers from the perspective of generic applications and provide a comparison of several solid-state breaker technologies based on key metrics Finally, we provide a useful framework and point of reference for future development of solid-state circuit breakers for many emerging power distribution applications

A Review of Solid-State Circuit Breakers

Wide bandgap power devices have emerged as an often superior alternative power switch technology for many power electronic applications. These devices theoretically have excellent material properties enabling power device operation at higher switching frequencies and higher temperatures compared with conventional silicon devices. However, material defects can dominate device behavior, particularly over time, and this should be strongly considered when trying to model actual characteristics of currently available devices. Compact models of wide bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Available compact models, i.e., models compatible with circuit-level simulators, are reviewed. In particular, this paper presents a review of compact models for silicon carbide power diodes and MOSFETs.

https://works.bepress.com/kang-peng/1/download/

Modeling of Wide-Bandgap Power Semiconductor Devices—Part II

Proper short-circuit protection in dc microgrids has provided a sturdy challenge to researchers as the development of commercially-viable equipment providing fast operation, coordination and reliability still continues. In this paper, issues associated with short-circuit protection of low-voltage dc (LVDC) microgrids are analyzed, a short-circuit protection methodology based on solid-state circuit breakers (SSCBs) that provides fault-current limiting (FCL) is evaluated, several fault-detection techniques are considered, and certain topics related to the SSCB design are addressed. Simulation results for a simple 1kV dc microgrid system illustrate that SSCB solutions based on integrated gate-commutated thyristors (IGCT) are feasible for low-voltage microgrids but requires connecting several devices in parallel to open fast-rising fault currents.

Short-circuit protection for low-voltage DC microgrids based on solid-state circuit breakers

Increasing load densities are leading to higher fault currents that may exceed the ratings of current circuit breakers. In addition, computer-controlled equipment is more susceptible to power supply disturbances of relatively long durations. So, there is a need for a new piece of equipment which is able to interrupt fault currents before reaching their first maximum peak isolating very fast faulted sections of a distribution system. Solid-state fault current limiters (SSFCL) have been proposed as a solution to accomplish the above, and thus, as a substitute for slow-operating electromechanical circuit breakers. The design of a silicon carbide fault current limiter with high voltage blocking capability and the subsequent testing at a 15-kV test facility are addressed in this paper. The semiconductor devices of this series-connected SSFCL are custom packaged silicon carbide super gate turnoff thyristors and SiC PIN diodes. The 4.16-kV experimental tests illustrate the performance of the proposed SSFCL and demonstrate the potential for deploying them in distribution systems.

A silicon carbide fault current limiter for distribution systems

With the continuing expansion of the electrical distribution system, a fault current limiter is proposed in order to protect electrical devices during fault conditions and improve overall power quality. This paper documents the design and fabrication of power modules based on SiC diode and super gate turn-off thyristor for use in a solid-state fault current limiter (SSFCL) for 4.16 kV distribution systems. The thermal and electrical performances of the power modules were investigated theoretically and experimentally. The current sharing capability of the modules while in a parallel configuration was tested and met the system requirements. The full SSFCL test showed that the power modules can successfully operate at 4.16kV.

A sic SGTO/PIN diode power electronic module for a fault current limiter

Due to increased demand and deployment of new technologies, such as electric vehicles, utilities face increasing fault currents in their systems. As a consequence protection devices must have higher ratings. Replacing existing infrastructure can prove expensive and complicated. Fault current limiters promise an upgrade solution that will mitigate the need for replacing existing breakers to keep fault currents within the ratings of existing protection equipment. SiC offers several key advantages to grid-connected power electronics, such as smaller footprint, faster switching speeds, and simpler cooling systems. This paper describes a 4 kV Silicon Carbide (SiC) fault current limiter that demonstrated the technologies' potential.1

Christopher Schirmer

Papers

A 4 kV Silicon Carbide solid-state fault current limiter