Two-dimensional (2D) materials have generated great interest in the past few years as a new toolbox for electronics. This family of materials includes, among others, metallic graphene, semiconducting transition metal dichalcogenides (such as MoS2), and insulating boron nitride. These materials and their heterostructures offer excellent mechanical flexibility, optical transparency, and favorable transport properties for realizing electronic, sensing, and optical systems on arbitrary surfaces. In this paper, we demonstrate a novel technology for constructing large-scale electronic systems based on graphene/molybdenum disulfide (MoS2) heterostructures grown by chemical vapor deposition. We have fabricated high-performance devices and circuits based on this heterostructure, where MoS2 is used as the transistor channel and graphene as contact electrodes and circuit interconnects. We provide a systematic comparison of the graphene/MoS2 heterojunction contact to more traditional MoS2-metal junctions, as well as a theoretical investigation, using density functional theory, of the origin of the Schottky barrier height. The tunability of the graphene work function with electrostatic doping significantly improves the ohmic contact to MoS2. These high-performance large-scale devices and circuits based on this 2D heterostructure pave the way for practical flexible transparent electronics.

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Graphene-MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

We investigate band gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV and is robust to stacking disorder. Moreover, boron nitride sheets do not alter the fundamental response from that of free-standing bilayer graphene, apart from additional screening. The calculations suggest that graphene−boron nitride heterostructures could provide a viable route to graphene-based electronic devices.

https://absimage.aps.org/image/MAR11/MWS_MAR11-2010-006455.pdf

Tunable band gaps in bilayer graphene-BN heterostructures

Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.

http://absimage.aps.org/image/MAR14/MWS_MAR14-2013-005031.pdf

Black Phosphorus Field-effect Transistors

Since the successful fabrication of two-dimensional (2D) tellurium (Te) in 2017, its fascinating properties including a thickness dependence bandgap, environmental stability, piezoelectric effect, high carrier mobility, and photoresponse among others show great potential for various applications. These include photodetectors, field-effect transistors, piezoelectric devices, modulators, and energy harvesting devices. However, as a new member of the 2D material family, much less known is about 2D Te compared to other 2D materials. Motivated by this lack of knowledge, we review the recent progress of research into 2D Te nanoflakes. Firstly, we introduce the background and motivation of this review. Then, the crystal structures and synthesis methods are presented, followed by an introduction to their physical properties and applications. Finally, the challenges and further development directions are summarized. We believe that milestone investigations of 2D Te nanoflakes will emerge soon, which will bring about great industrial revelations in 2D materials-based nanodevice commercialization.

/pdf/two-dimensional-tellurium-progress-challenges-and-prospects-4zzd6t14t9.pdf

Two-Dimensional Tellurium: Progress, Challenges, and Prospects

The monolayer of black phosphorus, or ``phosphorene,'' has recently emerged as a two-dimensional semiconductor with intriguing highly anisotropic transport properties. Existing calculations of its intrinsic phonon-limited electronic transport properties so far rely on the deformation potential approximation, which is in general not directly applicable to anisotropic materials since the deformation along one specific direction can scatter electrons traveling in all directions. We perform a first-principles calculation of the electron-phonon interaction in phosphorene based on density functional perturbation theory and Wannier interpolation. Our calculation reveals that (1) the high anisotropy provides extra phase space for electron-phonon scattering, and (2) optical phonons have appreciable contributions. Both effects cannot be captured by the deformation potential calculations. Our simulation predicts carrier mobilities $\ensuremath{\sim}170\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{2}/\mathrm{V}\phantom{\rule{0.16em}{0ex}}\mathrm{s}$ for both electrons and holes at $300\phantom{\rule{0.16em}{0ex}}\mathrm{K}$, and a thermoelectric figure of merit $zT$ of up to 0.14 in $p$-type impurity-free phosphorene at $500\phantom{\rule{0.16em}{0ex}}\mathrm{K}$.

Ab initio study of electron-phonon interaction in phosphorene

Based on the first-principles calculations, we demonstrated that a GeSe/SnSe heterostructure has type-II band alignment and a direct band gap, which can effectively prevent the recombination of photogenerated electron–hole pairs. Moreover, the GeSe/SnSe heterostructure also exhibits strong optical absorption intensity, which can reach the order of 105 cm−1. Our predicted photoelectric conversion efficiency (PCE) for the GeSe/SnSe heterostructure reaches 21.47%. We also found that the hole carrier mobility of the GeSe/SnSe heterostructure along the x direction has been significantly improved to 6.42 × 104 cm2 V−1 s−1, which is higher than that of black phosphorus (1 × 104 cm2 V−1 s−1). By applying a vertical external electric field, we found that the band gap and band offset of the GeSe/SnSe heterojunction can be effectively tuned. The revealed type-II band alignment, strong optical absorption, superior PCE and superior hole carrier mobility of the GeSe/SnSe heterostructure imply that this new proposed material has broad application prospects in solar cells.

A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells

Based on density functional theory, we computational designed the hetero junction composed by GeSe monolayer and graphene. The effects of interlayer coupling, strains and electric fields on the electronic structures of the designed GeSe/graphene (G/g) hetero structure are explored. We demonstrated that both the intrinsic electric properties of the GeSe monolayer and graphene are well preserved in G/g hetero structure. It is found that an energy gap of 0.17 eV in graphene is opened by decreasing the interlayer distance in G/g hetero structure. The height of Schottky barrier can be effectively tuned by the interlayer distance between GeSe monolayer and graphene. Moreover, we found that applying in-plane strains and the electric fields perpendicular to the G/g hetero structure can control the Schottky barriers at the G/g interface. Our results predict that the ultra-thin G/g hetero structure can be used as two-dimensional semiconductor-based optoelectronic devices.

https://iopscience.iop.org/article/10.1088/2053-1591/aaf5a0/pdf

Congsheng Xu

Papers

A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells

Computational design of GeSe/graphene heterojunction based on density functional theory