We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a deposited metal electrode and the oxide. We determine through impedance spectroscopy that the interfacial layer is no thicker than 10nm and that the switch is accompanied by a small capacitance increase associated with charge accumulation. Based on interfacial I–V characterization and measurement of the temperature dependence of the resistance, we propose that a field-created crystalline defect mechanism, which is controllable for devices, drives the switch.

Field-induced resistive switching in metal-oxide interfaces

Heteroepitaxial CeO2(80 nm)/L0.67Ca0.33MnO3(400 nm) film structures have been pulsed laser deposited on LaAlO3(001) single crystals to fabricate two terminal resistance switching devices. Ag/CeO2/L ...

Giant resistance switching in metal-insulator-manganite junctions : Evidence for Mott transition

The Cu2O metal-insulator-metal (MIM) resistive switching memory was characterized on a 64kb memory test array. The switching properties are consistent with the proposed switching model of conductivity modulation by a charge trapping process. Retention, programing characteristics, and temperature effects are analyzed based on the switching model. The measured characteristics and the switching model for Cu2O MIM are compared with those of other resistive switching materials. The statistical characteristics provide essential evidence for analysis of the switching mechanism and evaluation of the memory devices.

Switching characteristics of Cu2O metal-insulator-metal resistive memory

A multi-resistive state element that uses a treated interface is provided. A memory plug includes at least two electrodes that sandwich a multi-resistive state element. Using different treatments on both electrode/multi-resistive state element interfaces improves the memory properties of the entire memory device.

Resistive memory device with a treated interface

Bipolar resistive switching in low cost n-Si/La2/3Ca1/3MnO3/M (M = Ti + Cu) devices was investigated. For low SET compliance currents (CC), an interfacial-related resistive switching mechanism, associated to the migration of oxygen vacancies close to the manganite/metal interface, is operative. Simulations using the voltage enhanced oxygen vacancies drift model validate our experimental results. When further increasing the CC, we have observed the onset of a second, filamentary, resistive switching regime with a concomitant collapse of the ON/OFF ratio. We finally demonstrate that it is possible to delay the onset of the filamentary regime by controlling the film thickness.

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Two resistive switching regimes in thin film manganite memory devices on silicon

Resistive properties of point contacts in normal-metal-manganite heterojunctions have been investigated on the base of La0.7Sr0.3MnO3, La0.8Sr0.2MnO3, La0.8Ca0.2MnO3 single crystals. At considerable current levels the current-voltage characteristics of point contacts exhibit features in the form of resistance peaks at lower temperatures. Colossal magnetoresistance also considerably increases under transport current in the investigated heterojunctions. It has been assumed that the observed current switching effects are due to phase separation of manganites under the electric current.

Current switching of resistive states in normal-metal-manganite single-crystal point contacts

The current–voltage characteristics (IVC) and transport properties of point contacts in normal metal–manganite heterojunctions have been investigated on the base of La 1− x Sr x MnO 3 , La 1− x Ca x MnO 3 , La 1− x Ba x MnO 3 ( x =0.15–0.3) single crystals. At considerable current levels the IVC of point contacts show reproducible switching with memory effect. Negative or positive voltage switch the heterocontact resistance between high- and low-resistive states. It has been assumed that the observed current switching effects are due to phase separation of manganites under the electric current.

Reproducible switching in normal metal–manganite single crystal point contacts with memory effect

The magnetic structure of the doped perovskite manganites La0.7Sr0.3MnO3 and La0.8Ca0.2MnO3 at a temperature of 10 K has been investigated by using the decoration technique in a wide region of external magnetic fields (up to 1000 Oe). We observe the multidomain ferromagnetic state in La0.7Sr0.3MnO3 and the coexistence of the ferro- and nonmagnetic phases in La0.8Ca0.2MnO3. The dependence of the structure on an external magnetic field has been investigated in La0.8Ca0.2MnO3.

D. A. Shulyatev

Papers

Current switching of resistive states in normal-metal-manganite single-crystal point contacts

Reproducible switching in normal metal–manganite single crystal point contacts with memory effect

Observation of the magnetic structure in manganites by the high-resolution Bitter technique