Journal ArticleDOI
Current switching of resistive states in normal-metal-manganite single-crystal point contacts
TLDR
In this paper, resistive properties of point contacts in normal metal-manganite heterojunctions have been investigated on the base of La0.7Sr0.3MnO3, La 0.8Ca0.2MnNO3 single crystals.Abstract:
Resistive properties of point contacts in normal-metal-manganite heterojunctions have been investigated on the base of La0.7Sr0.3MnO3, La0.8Sr0.2MnO3, La0.8Ca0.2MnO3 single crystals. At considerable current levels the current-voltage characteristics of point contacts exhibit features in the form of resistance peaks at lower temperatures. Colossal magnetoresistance also considerably increases under transport current in the investigated heterojunctions. It has been assumed that the observed current switching effects are due to phase separation of manganites under the electric current.read more
Citations
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Journal ArticleDOI
Giant resistance switching in metal-insulator-manganite junctions : Evidence for Mott transition
TL;DR: Heteroepitaxial CeO2(80 nm)/L0.67Ca0.33MnO3(400 nm) film structures have been pulsed laser deposited on LaAlO3 (001) single crystals to fabricate two terminal resistance switching devices.
Journal ArticleDOI
Two resistive switching regimes in thin film manganite memory devices on silicon
Diego Rubi,Federico Tesler,I. Alposta,A. Kalstein,N. Ghenzi,F. Gomez-Marlasca,M. J. Rozenberg,Pablo Levy +7 more
TL;DR: In this paper, bipolar resistive switching in low-cost n-Si/La2/3Ca1/3MnO3/M (M = Ti + Cu) devices was investigated.
Journal ArticleDOI
Electron instability in doped-manganites-based heterojunctions
N.A. Tulina,V.V. Sirotkin +1 more
TL;DR: In this paper, the thermal conduction and Poisson equations of doped-manganites-based heterojunctions are numerically calculated for a model description of electron instability effects revealed in them under a strong current injection.
Journal ArticleDOI
Colossal electroresistance and electron instability in strongly correlated electron systems
TL;DR: In this paper, the electron instability effects in strongly correlated electron systems (SCESs), such as high-temperature superconductors (HTSCs) and doped manganites (compounds with colossal magnetoresistance), are reviewed.
Journal ArticleDOI
Reproducible resistive switching effect for memory applications in heterocontacts based on strongly correlated electron systems
TL;DR: In this article, the effect of resistive switching on the transition process in heterocontacts based on strongly correlated electron systems (SCES) has been analyzed, and it has been shown that the process is asymmetric with respect to switching into “on” and “off” states, the switching time is controlled by a voltage level, this time can be less than microseconds, on the other hand, relaxation processes can reach tens seconds.
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