The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.

Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof

A new type of vertical-cavity surface-emitting laser (VCSEL) is proposed and analyzed to show the possibility of optical pumping from an integrated edge-emitting laser. With this scheme, it may be possible to make VCSEL's of very small dimensions and VCSEL arrays. The laser design utilizes dopant induced intermixing of quantum wells (QW's) to provide different gain regions for the surface and edge-emitting sections. The multimode rate equations are used to evaluate the possibility of such a laser and the roles of the various design parameters are discussed. It is seen that efficient surface photon emission is possible for high vertical-cavity mirror reflectivities and sufficient separation of bandgap energies for the two QW gain regions.

Novel design of a hybrid-cavity surface-emitting laser

An improved optical transmitter comprises a vertically lasing semiconductor optical amplifier (VLSOA) coupled to an external modulator and/or a laser source. The VLSOA, external modulator and laser source are discrete devices or alternatively integrated onto a common substrate. The integrated optical transmitter may be fabricated using a number of different methods, including based on selective area epitaxy, impurity induced disordering, etch and fill and silicon optical bench.

Optical transmitter including a linear semiconductor optical amplifier

This disclosure is concerned with digital optical circuits, including an optical astable multivibrator. In one example, an optical astable multivibrator is provided that includes a lasing semiconductor optical amplifier (LSOA), such as a VLSOA for example. The LSOA is optically coupled to a time delay component and includes a pump input, amplifier input, amplifier output, and a ballast laser output. The time delay component includes an input that is optically coupled with the ballast laser output of the LSOA. The time delay component further includes an output that is optically coupled with the amplifier input of the LSOA. The output of the LSOA is a clock signal having a periodic square waveform whose frequency is determined by the time delay component.

Optical logical circuits based on lasing semiconductor optical amplifiers

Die Erfindung bezieht sich auf eine optisch gepumpte oberflachenemittierende Halbleiterlaservorrichtung mit mindestens einer strahlungserzeugenden Quantentopfstruktur (11) und mindestens einer Pumpstrahlungsquelle (20) zum optischen Pumpen der Quantentopfstruktur (11), bei der die Pumpstrahlungsquelle (20) eine kantenemittierende Halbleiterstruktur (21) aufweist. Die strahlungserzeugende Quantentopfstruktur (11) und die kantenemittierende Halbleiterstruktur (21) sind auf einem gemeinsamen Substrat (1) epitaktisch aufgewachsen. Mit dieser monolithisch hergestellten Halbleiterlaservorrichtung ist vorteilhafterweise ein sehr effektives und homogenes optisches Pumpen der strahlungserzeugenden Quantentopfstruktur moglich. Weiterhin sind Verfahren zum Herstellen von erfindungsgemasen Halbleiterlaservorrichtungen angegeben.

Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung

We report the observation of optical control of the stimulated emission of a vertical cavity surface emitting laser (VCSEL) by an intra‐cavity coupled in‐plane laser. Depending on the overlap between the two gain regions, greater than 70% change in threshold current to complete quenching of the VCSEL, is observed. The combined device offers a wide variety of potential applications for integrated, all‐optical logic devices and optical interconnects between signal planes.

Gain controlled vertical cavity surface emitting lasers coupled with intracavity in-plane lasers

An in situ laser reflectometer is used to determine the surface roughness of III–V laser heterostructure as it etches in an electron cyclotron resonance etcher. A stochastic model links the reflectometer signals with the fluctuations of the surface height and slope, and with the size of the illuminated surface area. This technique is valuable for improving the quality of optical waveguides etched in III–V heterostructure, and the electrical contacts for optoelectronic devices.

D. B. Shire

Papers

Gain controlled vertical cavity surface emitting lasers coupled with intracavity in-plane lasers

Etched‐surface roughness measurements from an in situ laser reflectometer