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D. Halley

Researcher at Centre national de la recherche scientifique

Publications -  38
Citations -  849

D. Halley is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Ferromagnetism & Thin film. The author has an hindex of 15, co-authored 36 publications receiving 796 citations. Previous affiliations of D. Halley include University of Strasbourg & Joseph Fourier University.

Papers
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Ordering intermetallic alloys by ion irradiation: a way to tailor magnetic media.

TL;DR: In this paper, the transformation from chemical disorder to order in thin films of an intermetallic ferromagnet (FePd) may be triggered and controlled Kinetic Monte Carlo simulations show that the initial directional short range order determines the transformation Magnetic ordering perpendicular to the film plane was achieved, promoting the initially weak magnetic anisotropy.
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Distance Dependence of the Energy Transfer Rate From a Single Semiconductor Nanostructure to Graphene

TL;DR: The results show that accurate distance measurements can be performed at the single particle level using graphene-based molecular rulers and that energy transfer allows probing dimensionality effects at the nanoscale.
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X-ray absorption near-edge structure and valence state of Mn in (Ga,Mn)N

TL;DR: In this paper, the x-ray absorption near-edge structure (XANES) at the K edge of the diluted magnetic semiconductor (Ga,Mn) was calculated using the linearized augmented plane wave method.
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Distance dependence of the energy transfer rate from a single semiconductor nanostructure to graphene.

TL;DR: In this paper, the distance dependence of the energy transfer rate from individual, (i) zero-dimensional CdSe/CdS nanocrystals and (ii) two-dimensional cdSe, CdS/ZnS nanoplatelets to a graphene monolayer was investigated, and accurate distance measurements can be performed at the single particle level using graphene-based molecular rulers.
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Evidence of a symmetry-dependent metallic barrier in fully epitaxial MgO based magnetic tunnel junctions.

TL;DR: It is shown how this remarkable behavior in a solid-state device reflects a quenching in the transmission of particular electronic states, as expected from the symmetry-filtering properties of the MgO barrier and the band structure of the bcc Cr(001) spacer in the epitaxial junction stack.