Nanostructured materials such as nanocomposites and nanolaminates are currently of intense interest in modern materials research. Nanolaminate materials are fully dense, ultra-fine grained solids that exhibit a high concentration of interface defects. They may be developed for engineering applications that take advantage of enhanced mechanical properties or for devices such as energy storage and memory storage capacitors. Nanolaminates can be grown using atom-by-atom deposition techniques that are designed with different stacking sequences and layer thicknesses. The properties of fabricated nanolaminates depend on their compositions and thicknesses. These can be demonstrated within the synthesis process by thickness control of each layer and interfacial chemical reaction between layers. In fact, dielectrics with the formed thin layer have efficient dielectric constant and high insulation characteristics. Dielectric materials with giant dielectric constants can be fabricated as modified single, binary and perovskite oxides. A review of the advantages offered by nanolaminate structures for high performance energy storage devices is presented. Developments of dielectric materials that are formed from a thin layer approach are evaluated. The influence of the interface layer on the dielectric constant of nanolaminate films is assessed from the perspective of conferring a giant dielectric constant and high insulation characteristics. The incorporation of dopants and site-engineering techniques, as well as layer-by-layer structures, which can both be suitable for improving dielectric properties of dielectric nanolaminates, is detailed. Finally, the current status and development of artificial dielectric materials for high performance energy storage devices formed by dielectric nanolaminates are presented.

A review on hybrid nanolaminate materials synthesized by deposition techniques for energy storage applications

The potential of chemical sensors for improving the quality control and efficiency of industrial processes has resulted in considerable research activity in the development of chemical sensors. Due to the combination of good ionic conductivity with low electronic conductivity, a number of solid metal fluorides are excellent electrolytes and thus have been used in chemical sensors for numerous applications ranging from room temperature oxygen gas sensors to sensors for use in the processing of molten metals. The most studied metal fluorides are those which form the cubic fluorite crystal structure, such as CaF2 and PbF2. However, recent research activity has shown that fluorides which form other crystal structures, such as tysonite (e.g. LaF3) and rutile (e.g. MgF2), have promising applications in chemical sensors. In this paper, the application of solid fluoride electrolytes in chemical sensors will be reviewed.

The application of solid fluoride electrolytes in chemical sensors

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Solid and Solid-Like Composite Electrolyte for Lithium Ion Batteries: Engineering the Ion Conductivity at Interfaces

A protective coating for a substrate is disclosed having an outer component or module formed of a swellable material and an inner module formed of a plurality of layer or bilayers formed of ceramic material. The coating comprising a plurality of modules comprising a first module comprising a number (m) of bilayers comprising zirconia and alumina wherein (m) is a number greater than 1. The coating further comprises a second module disposed on the first module comprising a number (n) of bilayers comprising zirconia and titania wherein (n) is a number greater than 1. The coating further comprises a third module disposed on the second module comprising a third-module compound capable of forming a hydrate or hydroxide compound upon contact with an oxygen containing environment.

Self-repairing ceramic coatings

The effect of the interface between Al2O3 and HfO2 sublayers on the dielectric constant was investigated in HfO2∕Al2O3 nanolaminate films deposited using plasma-enhanced atomic layer deposition After annealing at 700°C, the dielectric constants of the nanolaminate films with a sublayer thickness of 40A or greater were the same as the calculated values for a series of capacitors consisting of amorphous Al2O3 and monoclinic or tetragonal HfO2 As the sublayer thickness was reduced to 10A, the dielectric constant increased up to 177 because a thin Hf–O–Al mixture layer, of which the number increases drastically in the nanolaminate films with thin sublayers, is formed at the interface

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Interface effect on dielectric constant of HfO2∕Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition

Thin films of pure CaF2 and nanocomposite mixtures of Al2O3 with CaF2 were evaporated on Al2O3 substrates. Interdigital electrodes on some of the substrates allowed in situ measurements of the electrical conduction in the films during and subsequent to film growth. Electrical conduction was studied as a function of film thickness, film deposition rate, composition, time, and temperature. The electrical conductivity in pure CaF2 adjacent to an Al2O3 interface sometimes exceeded the bulk CaF2 conductivity (i.e., value at more than 50 nm distance) by as much as a factor of 6700 at 200 °C. The high conductivity is characterized by an activation energy of 0.6±0.1 eV, which is significantly lower than the activation energy of about 1.0 eV for conduction in the bulk. However, this high conductivity is thermally unstable and diminishes in time. A high but stable conductivity was obtained in CaF2 films containing about 10 mol % Al2O3 as a dispersed second phase. At 200 °C, a two‐phase film gave a factor of 360 enh...

D. Lubben

Papers

Electrical conduction in CaF2 and CaF2‐Al2O3 nanocomposite films on Al2O3 substrates