D
D. Pathinettam Padiyan
Researcher at Manonmaniam Sundaranar University
Publications - 100
Citations - 1718
D. Pathinettam Padiyan is an academic researcher from Manonmaniam Sundaranar University. The author has contributed to research in topics: Thin film & Band gap. The author has an hindex of 20, co-authored 100 publications receiving 1423 citations. Previous affiliations of D. Pathinettam Padiyan include Kamaraj College of Engineering and Technology.
Papers
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Influence of thickness and substrate temperature on electrical and photoelectrical properties of vacuum-deposited CdSe thin films
TL;DR: In this paper, the XRD patterns recorded for the CdSe thin films showed that these films are polycrystalline in nature and crystallise in the hexagonal form.
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Investigation of oxygen vacancies in Ce coupled TiO2 nanocomposites by Raman and PL spectra
TL;DR: CeO2-TiO2 nanocomposites with different Ce weight percentages (2, 4, 6 and 8%) were synthesized by sol-gel method as discussed by the authors and the influence of cerium inclusion on the structural, morphological, optical properties and elemental composition has been analyzed via XRD, BET surface area analysis, UV-DRS, HR-SEM, EDAX, TEM, Raman and photoluminescence spectra.
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Photocatalytic degradation of methyl orange using α-Bi2O3 prepared without surfactant
TL;DR: In this paper, the degradation efficiency varies with the calcination temperature and is maximum for the higher crystallinity one (600 ˚C) having larger surface area, the optical band gap value of 2.7344(9) eV also supported that bismuth oxide is used as a visible light photocatalyst.
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Electrical and Photoelectrical Properties of Vacuum Deposited SnSe Thin Films
TL;DR: In this paper, X-ray diffraction, optical transmission, electrical conductivity and photoconductivity studies have been carried out on polycrystalline thin films of tin selenide.
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Effect of structural, electrical and optical properties of electrodeposited bismuth selenide thin films in polyaniline aqueous medium
TL;DR: In this article, the optical band gap energy is found to be 2.35 eV for as-deposited Bi2Se3 thin film and it increases with increase in concentration of polyaniline.