A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.

Method for forming dielectric film using siloxane-silazane mixture

Remote‐plasma‐activated chemical‐vapor deposition (RPACVD) is a method whereby thin films are deposited with the substrate located out of the plasma zone. The lower rate of energetic ion and photon bombardment in RPACVD compared to conventional direct‐plasma‐enhanced chemical‐vapor deposition (DPECVD) reduces damage to the substrate. The use of RPACVD also enables one to more carefully tailor the flux of radicals to the substrate compared to DPECVD. This selectivity results from both physically isolating the substrate from undesirable radicals and limiting the variety of chemical pathways that produce radicals. A model for RPACVD is described and results from the model are discussed in the context of comparing gas mixtures and geometries in which this selectivity may be achieved. The chemistries investigated are Rg/SiH4 (Rg=Ar, He) for deposition of Si and Rg/NH3/SiH4 (Rg=Ar, He) for deposition of Si3N4. It is found that the selectivity in producing radicals that can be obtained by excitation transfer from excited states of rare gases is easily compromised by reactor configurations that allow injected gases to penetrate into the plasma zone.

https://uigelz.eecs.umich.edu/pub/articles/jap_71_4173_1992.pdf

Simulation of the gas‐phase processes in remote‐plasma‐activated chemical‐vapor deposition of silicon dielectrics using rare gas–silane‐ammonia mixtures

Remote plasma‐activated chemical‐vapor deposition (RPACVD) provides a means to depositthin dielectric films with low ion bombardment and while having high selectivity in generating precursors. In RPACVD of SiO2, gas mixtures of He/O2 or He/N2O are passed through a plasma, producing radicals and excited states that are mixed with silane downstream. Excited states produced in the plasma and precursor species produced by these reactions then flow to the substrate. Although high‐quality SiO2films can be produced by RPACVD, the gas‐phase deposition precursors have not been identified. A two‐dimensional plasma chemistry model is described, and results from that model are used in a discussion of possible gas‐phase precursors for SiO2deposition. In particular, the formation and transport of silanols (SiH2O and SiH3O) are examined as a function of gas mixture, power deposition, and geometry. It is found that the fluxes of SiH2O, SiH3O, and SiH3 are sufficient to account for the observed deposition rates; while systematic dependencies of the fluxes of HSiO and SiO discount them as being deposition precursors. He/N2O/SiH4 mixtures differ from He/O2/SiH4 mixtures by providing larger fluxes of SiH3 to the substrate, while the fluxes of SiH2O, SiH3O, and O2(1Δ) are significantly less.

/pdf/plasma-chemistry-of-he-o2-sih4-and-he-n2o-sih4-mixtures-for-50ywt9iyb2.pdf

Plasma chemistry of He/O2/SiH4 and He/N2O/SiH4 mixtures for remote plasma‐activated chemical‐vapor deposition of silicon dioxide

Method of forming a thin film on a substrate by CVD (Chemical Vapor Deposition) method and an apparatus therefor, wherein a first gas is supplied from a reaction gas supply port in a reaction chamber, and an active species produced by exciting a second gas are supplied from an active species supply port in the reaction chamber, and a thin film is formed on the substrate by reaction of the first reaction gas and the active species, since a metal porous plate having a number of small holes is installed close to the substrate between the active species supply port and a heater so as to enclose at least the substrate and the active species supply port, the precursor forming reaction is limited to position on the surface of the substrate and diffusion of the precursor to the outer circumferential portion and the inner wall of the reaction chamber is prevented, thereby the low dust producing process to advance the thin film forming reaction is obtained without generating the reaction product of fine particle form which may cause the dust producing

D.V. Tsu

Papers

Deposition of silicon-based dielectrics by remote plasma-enhanced chemical vapor deposition