抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Recent advances in mechanics and materials provide routes to integrated circuits that can offer the electrical properties of conventional, rigid wafer-based technologies but with the ability to be stretched, compressed, twisted, bent, and deformed into arbitrary shapes. Inorganic and organic electronic materials in microstructured and nanostructured forms, intimately integrated with elastomeric substrates, offer particularly attractive characteristics, with realistic pathways to sophisticated embodiments. Here, we review these strategies and describe applications of them in systems ranging from electronic eyeball cameras to deformable light-emitting displays. We conclude with some perspectives on routes to commercialization, new device opportunities, and remaining challenges for research.

http://science.sciencemag.org/content/sci/327/5973/1603.full.pdf

Materials and mechanics for stretchable electronics

Graphene, a two-dimensional monolayer of sp2-bonded carbon atoms, has been attracting great interest due to its unique transport properties. One of the promising applications of graphene is as a transparent conductive electrode owing to its high optical transmittance and conductivity. In this paper, we report on an improved transfer process of large-area graphene grown on Cu foils by chemical vapor deposition. The transferred graphene films have high electrical conductivity and high optical transmittance that make them suitable for transparent conductive electrode applications. The improved transfer processes will also be of great value for the fabrication of electronic devices such as field effect transistor and bilayer pseudospin field effect transistor devices.

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Transfer of large-area graphene films for high-performance transparent conductive electrodes

Since the discovery of highly conducting polyacetylene by Shirakawa, MacDiarmid, and Heeger in 1977, π-conjugated systems have attracted much attention as futuristic materials for the development and production of the next generation of electronics, that is, organic electronics. Conceptually, organic electronics are quite different from conventional inorganic solid state electronics because the structural versatility of organic semiconductors allows for the incorporation of functionality by molecular design. This versatility leads to a new era in the design of electronic devices. To date, the great number of π-conjugated semiconducting materials that have either been discovered or synthesized generate an exciting library of π-conjugated systems for use in organic electronics. 11 However, some key challenges for further advancement remain: the low mobility and stability of organic semiconductors, the lack of knowledge regarding structure property relationships for understanding the fundamental chemical aspects behind the structural design, and realization of desired properties. Organic field-effect transistors (OFETs) are a kind of device consisting of an organic semiconducting layer, a gate insulator layer, and three terminals (drain, source, and gate electrodes). OFETs are not only essential building blocks for the next generation of cheap and flexible organic circuits, but they also provide an important insight into the charge transport of πconjugated systems. Therefore, they act as strong tools for the exploration of the structure property relationships of πconjugated systems, such as parameters of field-effect mobility (μ, the drift velocity of carriers under unit electric field), current on/off ratio (the ratio of the maximum on-state current to the minimum off-state current), and threshold voltage (the minimum gate voltage that is required to turn on the transistor). 17 Since the discovery of OFETs in the 1980s, they have attracted much attention. Research onOFETs includes the discovery, design, and synthesis of π-conjugated systems for OFETs, device optimization, development of applications in radio frequency identification (RFID) tags, flexible displays, electronic papers, sensors, and so forth. It is beyond the scope of this review to cover all aspects of π-conjugated systems; hence, our focus will be on the performance analysis of π-conjugated systems in OFETs. This should make it possible to extract information regarding the fundamental merit of semiconducting π-conjugated materials and capture what is needed for newmaterials and what is the synthesis orientation of newπ-conjugated systems. In fact, for a new science with many practical applications, the field of organic electronics is progressing extremely rapidly. For example, using “organic field effect transistor” or “organic field effect transistors” as the query keywords to search the Web of Science citation database, it is possible to show the distribution of papers over recent years as shown in Figure 1A. It is very clear

Semiconducting π-conjugated systems in field-effect transistors: a material odyssey of organic electronics.

Human skin is a remarkable organ. It consists of an integrated, stretchable network of sensors that relay information about tactile and thermal stimuli to the brain, allowing us to maneuver within our environment safely and effectively. Interest in large-area networks of electronic devices inspired by human skin is motivated by the promise of creating autonomous intelligent robots and biomimetic prosthetics, among other applications. The development of electronic networks comprised of flexible, stretchable, and robust devices that are compatible with large-area implementation and integrated with multiple functionalities is a testament to the progress in developing an electronic skin (e-skin) akin to human skin. E-skins are already capable of providing augmented performance over their organic counterpart, both in superior spatial resolution and thermal sensitivity. They could be further improved through the incorporation of additional functionalities (e.g., chemical and biological sensing) and desired properties (e.g., biodegradability and self-powering). Continued rapid progress in this area is promising for the development of a fully integrated e-skin in the near future.

25th Anniversary Article: The Evolution of Electronic Skin (E-Skin): A Brief History, Design Considerations, and Recent Progress

Structuring Si, ranging from nanoscale to macroscale feature dimensions, is essential for many applications. Metal-assisted chemical etching (MaCE) has been developed as a simple, low-cost, and scalable method to produce structures across widely different dimensions. The process involves various parameters, such as catalyst, substrate doping type and level, crystallography, etchant formulation, and etch additives. Careful optimization of these parameters is the key to the successful fabrication of Si structures. In this review, recent additions to the MaCE process are presented after a brief introduction to the fundamental principles involved in MaCE. In particular, the bulk-scale structuring of Si by MaCE is summarized and critically discussed with application examples. Various approaches for effective mass transport schemes are introduced and discussed. Further, the fine control of etch directionality and uniformity, and the suppression of unwanted side etching are also discussed. Known application examples of Si macrostructures fabricated by MaCE, though limited thus far, are presented. There are significant opportunities for the application of macroscale Si structures in different fields, such as microfluidics, micro-total analysis systems, and microelectromechanical systems, etc. Thus more research is necessary on macroscale MaCE of Si and their applications.

Structuring of Si into Multiple Scales by Metal-Assisted Chemical Etching

Ag nanowire/PEDOT:PSS bilayer transparent electrode for high performance Si-PEDOT:PSS hybrid solar cells

Buckling of stiff thin films on compliant substrates represents a variety of applications, ranging from stretchable electronics to micro-nanometrology. Different but complementary to previously reported sinusoidal buckling waves, this letter presents a nonsinusoidal surface profile of buckled thin Au films on compliant substrates, specifically, a secondary dip on top of buckling wave or rather broadened wave top with very sharp trough. This nonsinusoidal profile is likely due to tension/compression asymmetry, i.e., different strengths in tension and compression resulted from the polycrystalline, grained microstructure of metal film. Finite element analysis with asymmetric tension/compression material model has reproduced the experiments well qualitatively.

Nonsinusoidal buckling of thin gold films on elastomeric substrates

Fabrication and characterization of ZnO nanowire transistors with organic polymer as a dielectric layer

The buckling-based measurement of mechanical properties of material is reviewed here, which is a very useful technique for the characterization of thin films, nano- or molecular-scale materials, etc. This method is shown to be useful to measure elastic moduli of various thin films such as polymers, polyelectrolyte multilayers (PEM), single-wall carbon nanotubes (SWNT) and millimeter-thick polymer network substrates. Further, it is also shown that the mechanical properties of various organic electronic materials, which may find wide applications in flexible and/or stretchable electronic devices, can be measured by the buckling method. Due to its fast, simple nature, the method can be extended to many other materials, especially to materials existing in thin film form only. The method would be a valuable, complementary technique in mechanical characterization of materials to be added to existing methods such as tensile testing, nano-indentation, and other methods.

Dahl Young Khang

Papers

Structuring of Si into Multiple Scales by Metal-Assisted Chemical Etching

Ag nanowire/PEDOT:PSS bilayer transparent electrode for high performance Si-PEDOT:PSS hybrid solar cells

Nonsinusoidal buckling of thin gold films on elastomeric substrates

Fabrication and characterization of ZnO nanowire transistors with organic polymer as a dielectric layer

Buckling-Based Measurements of Mechanical Moduli of Thin Films