A catheter insertion device (10) is provided for inserting an over-the-needle catheter (50). The device includes an insertion needle (20) that is retractable into the housing (30) of the device after use to prevent exposure to the contaminated needle. A needle retainer (40) releasably retains the needle in an extended position against the rearward bias of the biasing element (60). The needle retainer engages the hub (54) of the catheter so that when the catheter is removed from the insertion device, the needle retainer automatically releases the needle. The biasing element then propels the needle rearward into the housing of the device.

Catheter insertion device with retractable needle

An apparatus and method for monitoring the conductivity of a semiconductor wafer during the course of a polishing process. A polishing pad that contacts the wafer has an active electrode and at least one passive electrode, both of which are embedded in the polishing pad. A detecting device is connected to the active and passive electrodes for monitoring the current between the electrodes as the wafer is lapped by the polishing pad. The etch endpoint of the wafer is determined as a function of the magnitude of the current flow.

In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection

A method and apparatus for detecting a planar endpoint on a semiconductor wafer during chemical/mechanical planarization of the wafer. The planar endpoint is detected by sensing a change in friction between the wafer and a polishing surface. This change of friction may be produced when, for instance, an oxide coating of the wafer is removed and a harder material is contracted by the polishing surface. In a preferred form of the invention, the change in friction is detected by rotating the wafer and polishing surface with electric motors and measuring current changes on one or both of the motors. This current change can then be used to produce a signal to operate control means for adjusting or stopping the process.

Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers

An apparatus for detecting a planar endpoint on a semiconductor wafer during mechanical planarization of the wafer. The planar endpoint is detected by sensing a change in friction between the wafer and a polishing surface. This change of friction may be produced when, for instance, an oxide coating of the wafer is removed and a harder material is contacted by the polishing surface. In a preferred form, the change in friction is detected by rotating the wafer and polishing surface with electric motors and measuring current changes on one or both of the motors. This current change can then be used to produce a signal to operate control means for adjusting or stopping the process.

Apparatus for endpoint detection during mechanical planarization of semiconductor wafers

An etchback process for etching a refractory metal layer formed on a semiconductor substrate with a greatly reduced micro-loading effect. The etch proceeds in three steps. The first step is a uniform etch which utilizes a gas chemistry of SF6, O2 and He and proceeds for a predetermined time to remove most of the metal layer. The second step is a very uniform etch which utilizes a gas chemistry of SF6, Cl2 and He and proceeds until the endpoint is detected. The endpoint is detected by measurement and integration of the 772 nm and 775 nm lines of Cl. The third step is a timed etch utilizing a gas chemistry of Cl2 and He which is used as both an overetch to ensure complete removal of the refractory metal film and as a selective etchant to remove an adhesion underlayer.

Plasma etching process for refractory metal vias

A method for determining the end point for a physical etching process step measures the current at the target being etched and detects changes in the current. Changes in the current measured at the target are indicative of transitions between dissimilar materials or of depth of penetration in a particular material. Momentary changes in the etching flux of the physical etching process are factored out by measuring the current on a mask placed in the vicinity of the target and by subtracting mask current from current measured at the target.

End point detection method for physical etching process

In a method for reflow of a phosphosilicate glass (PSG) layer applied to a semiconductor wafer, the wafer is placed in a processing chamber in parallel alignment with a planar blackbody source. The chamber is evacuated, and the source rapidly and uniformly heats the PSG layer to a temperature at which plastic flow occurs. The blackbody source provides significant radiation in the 7-10 micron portion of the infrared spectrum. The thermal treatment is typically completed in 8-15 seconds, thereby avoiding impurity redistribution in the semiconductor device.

Method for reflow of phosphosilicate glass

Disclosed are methods and systems that include doping a semiconductor with at least one dopant, and exposing the semiconductor to an optical source(s), where the exposing occurs before, during, and/or after an annealing stage of said semiconductor. The annealing stage can include an annealing phase and/or an activation phase, which can occur substantially simultaneously. The systems can include at least one doping device for providing at least one dopant to a semiconductor, at least one annealing device to perform an annealing stage, and at least one optical source, where the semiconductor is exposed to light from the optical source(s) before, during, and/or after the annealing stage.

Apparatus and methods for junction formation using optical illumination

The formation of shallow junctions by rapid thermal processing (RTP) of 10 and 20 keV boron implants into both single crystal and preamorphized silicon wafers is investigated. Dopant activation and junction depths are studied over a wide range of anneal temperatures and times in preamorphized silicon. A two step anneal consisting of a low temperature (550°C) furnace anneal and a higher temperature RTP anneal is compared to a one step RTP anneal for junction depth and uniformity. Junction depths of less than 1200 A and sheet resistances of 100 Ω/□ were achieved for 10 keV. 1.2E15 ions/cm2 boron implants. The use of spreading resistance probe as an analytical tool to determine amorphous layer thickness is also discussed.

RTP shallow junction formation of low energy boron implants into preamorphized silicon

In batch process implantation systems, the presence of platen rotation and the possible use of domed platens produce averaging effects which complicate the design of implant geometries to minimize channeling. Data is presented for both flat and domed platens with different wafer orientation (twist) angles. Evidence is shown that channeling effects can be equivalently reduced for both flat and domed geometries.

Daniel F. Downey

Papers

End point detection method for physical etching process

Method for reflow of phosphosilicate glass

Apparatus and methods for junction formation using optical illumination

RTP shallow junction formation of low energy boron implants into preamorphized silicon

Planar channeling effects in a batch process ion implanter