D
Darrell G. Hill
Researcher at Motorola
Publications - 6
Citations - 50
Darrell G. Hill is an academic researcher from Motorola. The author has contributed to research in topics: Field-effect transistor & Bipolar junction transistor. The author has an hindex of 4, co-authored 6 publications receiving 50 citations.
Papers
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Patent
Multi-mode transceiver having tunable harmonic termination circuit and method therefor
TL;DR: In this article, the harmonic termination circuit of a transceiver includes a variable capacitor that is capable of adjusting its capacitance in response to the tunable harmonic termination voltage to achieve at least two modes of operation.
Patent
Electronic component and method of manufacture
TL;DR: In this article, an electronic component includes a substrate (110) and an airbridge (890) located over the substrate, the airbridge has at least a first layer and a second layer over the first layer.
Patent
Method of manufacturing a semiconductor component having a capacitor
TL;DR: In this paper, a method of manufacturing a semiconductor component includes forming a first capacitor electrode (126) over a substrate (110), forming a capacitor dielectric layer (226) over the first capacitance electrode, and forming a second capacitor electrode(326) over this layer.
Patent
Semiconductor component and method of manufacturing same
TL;DR: A semiconductor component includes: a semiconductor substrate (110); an epitaxial semiconductor layer (120) above the semiconductor surface; a bipolar transistor (770, 870); a field effect transistor (780, 880) in the epitaxia semiconductor (ES) layer; and an EM emitter of the bipolar transistor and a channel of the FET as discussed by the authors.
Patent
Heterojunction bipolar transistor with monolithically integrated junction field effect transistor and method of manufacturing same
TL;DR: In this article, the authors present a model of a semiconductor component that consists of: an epitaxial semiconductor layer (120 ) above the semiconductor substrate, a bipolar transistor (770, 870 ), a field effect transistor ( 780, 880 ), and a field-effect transistor (780, 850 ).