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David A. McKeown
Researcher at National Institute of Standards and Technology
Publications - 2
Citations - 37
David A. McKeown is an academic researcher from National Institute of Standards and Technology. The author has contributed to research in topics: XANES & Sphalerite. The author has an hindex of 2, co-authored 2 publications receiving 36 citations.
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X-ray-absorption near-edge structure of transition-metal zinc-blende semiconductors: Calculation versus experimental data and the pre-edge feature.
TL;DR: The conclusions from the calculations indicate that the pre-edge feature in the experimental Cu- and Fe-edge data for chalcopyrite can be due to interference effects from the atomic structure surrounding the absorber, but cannot exclude the possibility that it is due to atomic bound-state transitions of the absorbers.
Journal Article
X-Ray-Absorption Near-Edge Structure of Transition-Metal Zinc-Blende Semiconductors: Calculation Versus Experimental Data and the Pre-Edge Feature
TL;DR: In this article, X-ray-absorption near-edge structure (XANES) data were collected for Zn in sphalerite (ZnS), and for Cu and Fe in chalcopyrite (${\mathrm{CuFeS}}_{2}$), where all three cations are in nearly identical coordination environments.