An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The outstanding properties of SiO2, which include high resistivity, excellent dielectric strength, a large band gap, a high melting point, and a native, low defect density interface with Si, are in large part responsible for enabling the microelectronics revolution. The Si/SiO2 interface, which forms the heart of the modern metal–oxide–semiconductor field effect transistor, the building block of the integrated circuit, is arguably the worlds most economically and technologically important materials interface. This article summarizes recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si–O–N (silicon oxynitride) gate dielectrics on Si based devices. We will emphasize an understanding of the limits of these gate dielectrics, i.e., how their continuously shrinking thickness, dictated by integrated circuit device scaling, results in physical and electrical property changes that impose limits on their usefulness. We observe, in conclusion, that although Si microelectronic devices...

Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

Rise of silicene: A competitive 2D material

X-ray photoelectron spectroscopy and scanning electron microscopy were used to study electrode samples obtained from 18650-type lithium-ion cells subjected to accelerated calendar-life testing at temperatures ranging from 25 to 70 C and at states-of-charge from 40 to 80%. The cells contained LiNi{sub 0.8}Co{sub 0.2}O{sub 2}-based positive electrodes (cathodes), graphite-based negative electrodes (anodes), and a 1 M LiPF{sub 6} ethylene carbonate:diethyl carbonate (1:1) electrolyte. The results from electrochemically treated samples showed surface film formation on both electrodes. The positive electrode laminate surfaces contained a mixture of organic species that included polycarbonates, and LiF, Li{sub x}PF{sub y}-type and Li{sub x}PF{sub y}O{sub z}-type compounds. The same surface compounds were observed regardless of test temperature, test duration, and state-of-charge. On the negative electrode laminates lithium alkyl carbonates (ROCO{sub 2}Li) and Li{sub 2}CO{sub 3} were found in addition to the above-mentioned compounds. Decomposition of lithium alkyl carbonates to Li{sub 2}CO{sub 3} occurred on negative electrodes stored at elevated temperature. Initial depth-profiling results suggest that the surface layer thickness is greater on positive electrode samples from cells stored at high temperature than on samples from cells stored at room temperature. This observation is significant because positive electrode impedance, and more specifically, charge-transfer resistance at the electrode/electrolytemore » interface, has been shown to be the main contributor to impedance rise in these cells.« less

https://iopscience.iop.org/article/10.1149/1.1505636/pdf

Surface Characterization of Electrodes from High Power Lithium-Ion Batteries

A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.

Method of depositing an amorphous carbon layer

Fluorine-doped oxide is formed that is resistant to water absorption by the use of two sources of silicon, one being the fluorine precursor and the other being available to react with excess fluorine from the fluorine precursor, thereby reducing the number of fluorine radicals in the layer; the fluorine precursor containing a glass-forming element that combines with the other glass constituents to carry into the gas a diatomic radical containing one atom of fluorine and one atom of the glass-forming element.

PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element

The subject invention provides a method of enhancing the etch rate of boron nitride which comprises doping a layer of boron nitride with an element from Group IVA of the Periodic Table of the Elements, such as silicon, carbon, or germanium. The doped boron nitride layer can be wet etched at a faster rate with hot phosphoric acid than was possible prior to doping the boron nitride.

Method for etching boron nitride

A process for forming a thin film on a surface of a semiconductor device. The process involves formation of a silicon dioxide film by plasma enhanced thermal oxidation, employing a mixture of ozone and oxygen which are generated separately from the reactor chamber in a volume ratio of about 1-10/1, preferably about 5-7/1, at a temperature generally below 440° C., preferably about 350°-400° C. The process is used to form sidewall oxide spacers on polysilicon gates for field effect transistors. A relatively fast oxidation rate is achieved at a temperature significantly below that employed in conventional oxidation processes, and this serves to reduce dopant diffusion from the polysilicon. In addition, the resulting film demonstrates low stress with good conformal step coverage of the polysilicon gates. Another use of the process is to grow thin gate oxides and oxide-nitride-oxide with a thickness of less than 100Å. An oxide film of uniform thickness is formed by controlling the temperature, RF power, exposure time and oxygen/ozone ratio for thin gate oxide (<100Å) application in ULSI FET fabrication.

Low temperature plasma oxidation process

A method for low temperature annealing (oxidation) of high dielectric constant Ta 2 O 5 thin films uses an ozone enhanced plasma. The films produced are especially applicable to 64 and 256 Mbit DRAM applications. The ozone enhanced plasma annealing process for thin film Ta 2 O 5 reduces the processing temperature to 400° C. and achieves comparable film quality, making the Ta 2 O 5 films more suitable for Ultra-Large Scale Integration (ULSI) applications (storage dielectric for 64 and 256 Megabit DRAMs with stack capacitor structures, etc.) or others that require low temperature processing. This low temperature process is extendable to other high dc and piezoelectric thin films which may have many other applications.

Method of making TA2 O5 thin film by low temperature ozone plasma annealing (oxidation)

Plasma- and thermal-assisted chemical vapor deposited (CVD) tetrathylorthosilicate (TEOS) oxide films were deposited on silicon substrates using a single-wafer reactor. The deposition kinetics of both plasma and thermal CVD processes were studied as a function of temperature. Film properties and bonding structure were analyzed for as-deposited and annealed films using Fourier transform infrared spectroscopy (FTIR), Auger, x-ray photoelectron spectroscopy (XPS), and nuclear reaction analysis (NRA) techniques. The thermal TEOS films were found to be more porous and to contain more hydrogen, but were more conformal than plasma-deposited TEOS films. Without a plasma, thermal temperatures can assist gas-phase reactions between ozone and TEOS (oxidation) to form conformal oxide films at as low as 200°C. With a plasma, both gas-phase and subsequent surface CVD reactions between TEOS, ozone, and oxygen are substantially enhanced, thus result in CVD films with higher quality

https://iopscience.iop.org/article/10.1149/1.2086914/pdf

David M. Dobuzinsky

Papers

PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element

Method for etching boron nitride

Low temperature plasma oxidation process

Method of making TA2 O5 thin film by low temperature ozone plasma annealing (oxidation)

Reaction Mechanisms of Plasma‐ and Thermal‐Assisted Chemical Vapor Deposition of Tetraethylorthosilicate Oxide Films