D
David V. Horak
Researcher at IBM
Publications - 279
Citations - 5631
David V. Horak is an academic researcher from IBM. The author has contributed to research in topics: Layer (electronics) & Gate oxide. The author has an hindex of 37, co-authored 279 publications receiving 5631 citations. Previous affiliations of David V. Horak include GlobalFoundries & Infineon Technologies.
Papers
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Patent
Accessible chip stack and process of manufacturing thereof
TL;DR: In this paper, a process of manufacturing a three-dimensional integrated circuit chip or wafer assembly and processing of chips while arranged on a wafer prior to orienting the chips into stacks is described.
Patent
Forming capping layer over metal wire structure using selective atomic layer deposition
TL;DR: In this paper, the authors proposed a method of forming a capping layer over a metal wire structure of a semiconductor device, which is then activated by forming a seed layer thereon.
Patent
Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching
Jeffrey J. Brown,Sadanand V. Deshpande,David V. Horak,Maheswaran Surendra,Len Y. Tsou,Qingyun Yang,Chienfan Yu,Ying Zhang +7 more
TL;DR: In this paper, a method of fabricating an electronic chip on a wafer in which a first mask at a predetermined lower resolution is developed on the wafer and then etched under a first set of conditions for a predetermined period to achieve a mask that is below the resolution limit of current lithography.
Patent
Moving lens for immersion optical lithography
TL;DR: An apparatus for immersion optical lithography has a lens capable of relative movement in synchrony with a horizontal motion of a semiconductor wafer in a liquid environment where the synchronous motion of the lens apparatus and semiconductor Wafer advantageously reduces the turbulence and air bubbles associated with a liquid environments as mentioned in this paper.
Patent
Methods for forming uniform lithographic features
Toshiharu Furukawa,Mark C. Hakey,Steven J. Holmes,David V. Horak,Charles W. Koburger,Chung Hon Lam +5 more
TL;DR: In this paper, a conformal layer is deposited over the overhang and in the holes until the conformal layers close off the holes to form a void/seam in each hole.