Materials research has driven the development of modern nano-electronic devices. In particular, research in magnetic thin films has revolutionized the development of spintronic devices1,2 because identifying new magnetic materials is key to better device performance and design. Van der Waals crystals retain their chemical stability and structural integrity down to the monolayer and, being atomically thin, are readily tuned by various kinds of gate modulation3,4. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr2Ge2Te6 (ref. 5) and CrI3 (ref. 6) at low temperatures. Here we develop a device fabrication technique and isolate monolayers from the layered metallic magnet Fe3GeTe2 to study magnetotransport. We find that the itinerant ferromagnetism persists in Fe3GeTe2 down to the monolayer with an out-of-plane magnetocrystalline anisotropy. The ferromagnetic transition temperature, Tc, is suppressed relative to the bulk Tc of 205 kelvin in pristine Fe3GeTe2 thin flakes. An ionic gate, however, raises Tc to room temperature, much higher than the bulk Tc. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2 opens up opportunities for potential voltage-controlled magnetoelectronics7-11 based on atomically thin van der Waals crystals.

Gate-tunable Room-temperature Ferromagnetism in Two-dimensional Fe 3 GeTe 2

We have produced ultrathin epitaxial graphite films which show remarkable 2D electron gas (2DEG) behavior. The films, composed of typically 3 graphene sheets, were grown by thermal decomposition on the (0001) surface of 6H-SiC, and characterized by surface-science techniques. The low-temperature conductance spans a range of localization regimes according to the structural state (square resistance 1.5 kOhm to 225 kOhm at 4 K, with positive magnetoconductance). Low resistance samples show characteristics of weak-localization in two dimensions, from which we estimate elastic and inelastic mean free paths. At low field, the Hall resistance is linear up to 4.5 T, which is well-explained by n-type carriers of density 10^{12} cm^{-2} per graphene sheet. The most highly-ordered sample exhibits Shubnikov - de Haas oscillations which correspond to nonlinearities observed in the Hall resistance, indicating a potential new quantum Hall system. We show that the high-mobility films can be patterned via conventional lithographic techniques, and we demonstrate modulation of the film conductance using a top-gate electrode. These key elements suggest electronic device applications based on nano-patterned epitaxial graphene (NPEG), with the potential for large-scale integration.

Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics

Electrochromic devices (ECDs) have been regarded as promising candidates for energy-saving smart windows, next-generation displays and wearable electronics due to their significant benefits of simple and adjustable structures, low power consumption, flexible and stretchable features, and eye-friendly modes for displays. However, there are many existing issues waiting to be solved such as durability, reversibility and inadequate switching performances. These insurmountable technical bottlenecks significantly slow down the commercialization of next-generation ECDs. Nanomaterials with superior active reaction surface area have played indispensable roles in optimizing heterogeneous electron transfer and homogeneous ion transfer for ECDs and other optoelectronic devices. In recent years, with the joint efforts of various outstanding research teams, new kinds and methods for nanomaterials to fabricate ECDs with excellent performances have been rapidly developing. This review highlights the latest exciting results regarding the design and application of new and unique nanomaterials for each layer of ECDs. Meanwhile, the structures, mechanisms, features and preparation of the reported nanomaterials to improve the electrochromic properties have been discussed in detail. In addition, the remaining challenges and corresponding strategies of this field are also proposed. Hopefully, this review can inspire more and more researchers to enrich the nanomaterials for ECDs and other related fields to overcome faced technical barriers by innovative means and promote industrialization of ECDs and other optoelectronic technologies.

Advances in nanomaterials for electrochromic devices

Flexible and Transparent Electrochromic Displays with Simultaneously Implementable Subpixelated Ion Gel-Based Viologens by Multiple Patterning

The unique two-dimensional structure and outstanding electronic, thermal, and mechanical properties of graphene have attracted the interest of scientists and engineers from various fields. The first step in translating the excellent properties of graphene into practical applications is the preparation of large area, continuous graphene films. Chemical vapour deposition (CVD) graphene has received increasing attention because it provides access to large-area, uniform, and continuous films of high quality. However, current CVD synthetic techniques utilize metal substrates (Cu or Ni) to catalyse the growth of graphene and post-growth transfer of the graphene film to a substrate of interest is critical for most applications such as electronics, photonics, and spintronics. Here we discuss recent advances in the transfer of as-grown CVD graphene to target substrates. The methods that afford CVD graphene on a target substrate are summarized under three categories: transfer with a support layer, transfer without a support layer, and direct growth on target substrates. At present the first two groups dominate the field and research efforts are directed towards refining the choice of the support layer. The support layer plays a vital role in the transfer process because it has direct contact with the atomically thin graphene surface, affecting its properties and determining the quality of the transferred graphene.

Advances in transferring chemical vapour deposition graphene: a review

The ability to tune the physical properties of bistable organic functional materials by means of chemistry can facilitate their development for molecular electronic switching components. The butylamine-containing biphenalenyl boron neutral radical, [Bu]2 B, crystalline compound has recently attracted significant attention by displaying a hysteretic phase transition accompanied by simultaneous bistability in magnetic, electrical, and optical properties close to room temperature. In this report, substitutional doping was applied to [Bu]2 B by crystallizing solid solutions of bistable [Bu]2 B and its non-radical-containing counterpart [Bu]2 Be. With increasing doping degree, the hysteretic phase transition is gradually suppressed in terms of reducing the height, but conserves the width of the hysteresis loop as observed through magnetic susceptibility and electrical conductivity measurements. At the critical doping level of about 6 %, the abrupt transformation of the crystal structure to that of the pure [Bu]2 Be crystal packing was observed, accompanied by a complete collapse of the hysteresis loop. Further study of the structure-properties relationships of bistable neutral radical conductors based on the [Bu]2 B host can be conducted utilizing a variety of biphenalenyl-based molecular conductors.

Effect of Substitution on the Hysteretic Phase Transition in a Bistable Phenalenyl-Based Neutral Radical Molecular Conductor

We discuss advances in the covalent modification of the carbon allotropes, in particular graphene and carbon nanotubes. The main focus is on the organometallic chemistry that affords the possibility to electronically interconnect graphitic surfaces by means of covalent bonding. This mode of functionalization allows the formation of atomic scale interconnects that consist of bis-hexahapto-metal-bonds between benzenoid ring systems, which increases the dimensionality of the electronic structure of the materials leading to enhanced conductivity. The bis-hexahapto bond formation in single walled carbon nanotubes (SWNTs), graphite nanoplatelets and graphene, can be readily accomplished by metal vapor synthesis (e-beam evaporation), solution and photochemical routes.

Dejan Stekovic

Papers

Effect of Substitution on the Hysteretic Phase Transition in a Bistable Phenalenyl-Based Neutral Radical Molecular Conductor

Invited) Effect of Covalent Chemistry on the Electronic Structure and Properties of the Carbon Allotropes