Showing papers by "Deren Yang published in 1991"

Thermal acceptor formation in nitrogen‐doped silicon

Abstract: The nitrogen‐doped Czochralski (CZ) silicon crystals were grown in a nitrogen atmosphere under reduced pressure. The results show that the resistivity of n‐type N‐doped silicon increases rapidly with annealing time above 700 °C, but that of p‐type N‐doped CZ silicon decreases rapidly under the same conditions. It is suggested that thermal acceptors (TA) are formed in N‐doped silicon. The concentration of thermal acceptor can reach to 1×1014 atom/cm3. The higher the annealing temperature, the longer the time for the maximum thermal acceptor concentration to appear. Nitrogen and oxygen impurities play important roles for generating the thermal acceptor. It is postulated that the thermal acceptor is a kind of Si‐O‐N complex.