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Dipayan Sen

Researcher at Jadavpur University

Publications -  49
Citations -  1090

Dipayan Sen is an academic researcher from Jadavpur University. The author has contributed to research in topics: Field electron emission & Graphene. The author has an hindex of 16, co-authored 45 publications receiving 899 citations. Previous affiliations of Dipayan Sen include Regional Institute of Ophthalmology.

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Amino-functionalized graphene quantum dots: origin of tunable heterogeneous photoluminescence

TL;DR: Comprehensive theoretical and experimental analysis revealed that newly created energy levels can exist as an interband within the energy gap in functionalized graphene quantum structures yielding excitation dependent tunable PL for optoelectronic applications.
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Small Pd cluster adsorbed double vacancy defect graphene sheet for hydrogen storage: A first- principles study

TL;DR: In this article, the stability and electronic properties of small Pdn clusters (n ¼ 1e5), adsorbed on different types of double vacancy (DV) defect graphene sheets are thoroughly investigated by both density functional theory (DFT) and molecular dynamics (MD).
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Cu2O/g-C3N4 nanocomposites: an insight into the band structure tuning and catalytic efficiencies.

TL;DR: An easy and scalable room-temperature synthesis of Cu2O nanoparticle incorporated graphitic carbon nitride composites without the aid of any inert atmosphere is demonstrated.
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Implications of boron doping on electrocatalytic activities of graphyne and graphdiyne families: a first principles study

TL;DR: Computations performed by varying electrode potential indicated this monotonically exothermic nature of the ΔG of B doped RGy to persist in the range 0-0.22 V and also indicated the first (H(+) + e) transfer step to be the rate limiting step.
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Rules of Boron–Nitrogen Doping in Defect Graphene Sheets: A First-Principles Investigation of Band-Gap Tuning and Oxygen Reduction Reaction Catalysis Capabilities

TL;DR: Systematic exploration of the possible doping/codoping configurations reflecting defect regions of graphene presents a prevalent doping site for nitrogen-rich BN clusters and they are also highly suitable for modulating (0.2-0.9 eV) the band gap of defect graphene.