Provided are a semiconductor device, which can facilitate a salicide process and can prevent a gate from being damaged due to misalign, and a method of manufacturing of the semiconductor device. The method includes forming a first insulation layer pattern on a substrate having a gate pattern and a source/drain region formed at both sides of the gate pattern, the first insulation layer pattern having an exposed portion of the source/drain region, forming a silicide layer on the exposed source/drain region, forming a second insulation layer on the entire surface of the substrate to cover the first insulation layer pattern and the silicide layer, and forming a contact hole in the second insulation layer to expose the silicide layer.

Semiconductor devices and methods of manufacturing the same

A semiconductor device includes capacitors connected in parallel. Electrode active portions and a discharge active portion are defined on a semiconductor substrate, and capping electrodes are disposed respectively on the electrode active portions. A capacitor-dielectric layer is disposed between each of the capping electrodes and each of the electrode active portions that overlap each other. A counter doped region is disposed in the discharge active portion. A lower interlayer dielectric covers the entire surface of the semiconductor substrate. Electrode contact plugs respectively contact the capping electrodes through the lower interlayer dielectric, and a discharge contact plug contacts the counter doped region through the lower interlayer dielectric. A lower interconnection is disposed on the lower interlayer dielectric and contacts the electrode contact plugs and the discharge contact plug.

Semiconductor devices and methods of fabricating the same

An overview of through-silicon-via technology and manufacturing challenges

The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.

Method for fabricating a semiconductor device

The performance of future manycore processors will only scale with the number of integrated cores if there is a corresponding increase in memory bandwidth. Projected scaling of electrical DRAM architectures appears unlikely to suffice, being constrained by processor and DRAM pin-bandwidth density and by total DRAM chip power, including off-chip signaling, cross-chip interconnect, and bank access energy. In this work, we redesign the DRAM main memory system using a proposed monolithically integrated silicon photonics technology and show that our photonically interconnected DRAM (PIDRAM) provides a promising solution to all of these issues. Photonics can provide high aggregate pin-bandwidth density through dense wavelength-division multiplexing. Photonic signaling provides energy-efficient communication, which we exploit to not only reduce chip-to-chip interconnect power but to also reduce cross-chip interconnect power by extending the photonic links deep into the actual PIDRAM chips. To complement these large improvements in interconnect bandwidth and power, we decrease the number of bits activated per bank to improve the energy efficiency of the PIDRAM banks themselves. Our most promising design point yields approximately a 10x power reduction for a single-chip PIDRAM channel with similar throughput and area as a projected future electrical-only DRAM. Finally, we propose optical power guiding as a new technique that allows a single PIDRAM chip design to be used efficiently in several multi-chip configurations that provide either increased aggregate capacity or bandwidth.

/pdf/re-architecting-dram-memory-systems-with-monolithically-pg7axlcn5p.pdf

Re-architecting DRAM memory systems with monolithically integrated silicon photonics

A microelectronic device includes a substrate having at least one microelectronic component on a surface thereof, a conductive via electrode extending through the substrate, and a stress relief structure including a gap region therein extending into the surface of the substrate between the via electrode and the microelectronic component. The stress relief structure is spaced apart from the conductive via such that a portion of the substrate extends therebetween. Related devices and fabrication methods are also discussed.

Semiconductor devices including stress relief structures

An integrated circuit device includes a substrate through which a first through-hole extends, and an interlayer insulating film on the substrate, the interlayer insulating film having a second through-hole communicating with the first through-hole. A Through-Silicon Via (TSV) structure is provided in the first through-hole and the second through-hole. The TSV structure extends to pass through the substrate and the interlayer insulating film. The TSV structure comprises a first through-electrode portion having a top surface located in the first through-hole, and a second through-electrode portion having a bottom surface contacting with the top surface of the first through-electrode portion and extending from the bottom surface to at least the second through-hole. Related fabrication methods are also described.

Integrated circuit device including through-silicon via structure having offset interface

A semiconductor device may include a semiconductor substrate, a through via electrode, and a buffer. The through via electrode may extend through a thickness of the semiconductor substrate with the through via electrode surrounding an inner portion of the semiconductor substrate so that the inner portion of the semiconductor substrate may thus be isolated from the outer portion of the semiconductor substrate. The buffer may be in the inner portion of the semiconductor substrate with the through via electrode surrounding and spaced apart from the buffer. Related methods are also discussed.

Semiconductor devices including through silicon via electrodes and methods of fabricating the same

For the first time, a highly manufacturable fin-channel array transistor (FCAT) on a bulk Si substrate has been successfully integrated in a 512 M density DRAM with sub-70nm technology The FCAT shows an excellent short channel behavior, such as extremely low subthreshold swing (SS) (/spl sim/75mV/dec) and DIBL (/spl sim/13mV/V), and a high cell transistor drive current with remarkably low subthreshold leakage current (/spl sim/02fA/cell)

Fin-channel-array transistor (FCAT) featuring sub-70nm low power and high performance DRAM

An integrated circuit device including a through-silicon-via (TSV) structure and methods of manufacturing the same are provided. The integrated circuit device may include the TSV structure penetrating through a semiconductor structure. The TSV structure may include a first through electrode unit including impurities of a first concentration and a second through electrode unit including impurities of a second concentration greater than the first concentration.

Do-Sun Lee

Papers

Semiconductor devices including stress relief structures

Integrated circuit device including through-silicon via structure having offset interface

Semiconductor devices including through silicon via electrodes and methods of fabricating the same

Fin-channel-array transistor (FCAT) featuring sub-70nm low power and high performance DRAM

Integrated Circuit Device Having Through-Silicon-Via Structure and Method of Manufacturing the Same