D
Dongryul Jeon
Researcher at Seoul National University
Publications - 36
Citations - 399
Dongryul Jeon is an academic researcher from Seoul National University. The author has contributed to research in topics: Scanning tunneling microscope & Thin film. The author has an hindex of 10, co-authored 35 publications receiving 385 citations. Previous affiliations of Dongryul Jeon include Pennsylvania State University & Tohoku University.
Papers
More filters
Journal ArticleDOI
Structural and electronic properties of ordered single and multiple layers of Na on the Si(111) surface.
TL;DR: It is proposed, based on the structural analysis, that this Na-induced 3\ifmmode\times\texttimes\fi{}1 reconstruction on the Si(111) surface represents a two-dimensional Mott-Hubbard system.
Journal ArticleDOI
Scanning tunneling spectroscopic evidence for granular metallic conductivity in conducting polymeric polyaniline.
TL;DR: Scanning tunneling microscopy and point-probe electrical conductivity measurements of electrochemically protonated films of the emeraldine-base form of the conducting polymer, polyaniline are reported, indicating an increase in states at the Fermi level.
Journal ArticleDOI
Secondary electron emission yields from MgO deposited on carbon nanotubes
Whikun Yi,SeGi Yu,Won-tae Lee,In Taek Han,Taewon Jeong,Yoonseong Woo,Jeonghee Lee,Sunghwan Jin,Wonbong Choi,Jungna Heo,Dongryul Jeon,J. M. Kim +11 more
TL;DR: In this article, the kinetic energy spectra of secondary electrons are measured by an energy analyzer at various bias voltages in MgO/carbon nanotube samples. And the analysis of spectral results with the energy band diagram gives strong evidence for the suggested mechanism.
Journal ArticleDOI
STM of the Cu(111)1 × 1 surface and its exposure to chlorine and sulfur
TL;DR: In this paper, the differences between the chlorine and the sulfur adsorption system are discussed and the structural analysis for various phases as a function of coverage is carried out for different phases.
Journal ArticleDOI
The absolute coverage of K on the Si(111)-3×1-K surface
TL;DR: The absolute coverage of K on the Si(111)-3×1-K surface which was prepared by deposition of k on the 420°C Si substrate was determined, by using coaxial impact-collision ion scattering spectroscopy, to be 0.29±0.03ML as mentioned in this paper.