Showing papers by "E. Muñoz published in 1989"
TL;DR: In this paper, the capacitance properties of n−type AlxGa1−x As, for x>0.2, are governed by deep donor states (formerly called DX centers) created by the isolated donor atoms.
Abstract: The electrical properties of n‐type AlxGa1−x As, for x>0.2, are governed by deep donor states (formerly called DX centers) created by the isolated donor atoms. We have studied the capacitance properties of such layers for Si and Sn dopants. The meanings of the capacitance‐voltage carrier profiling and of the capacitance dependence with temperature have been considered. The deep donor energy position with respect to the Γ minimum has been determined.
17 citations
TL;DR: In this article, the electron capture kinetics are modeled, and the influence of the donor ionization factor, sample degeneracy, and size effects, are introduced, and a comparison with experimental capture data is made.
Abstract: n‐type dopants in Alx Ga1−x As, GaAs1−x Px, and related compounds create deep donors that control the free‐electron concentration for x>0.2. The electron capture by the deep donors shows a very nonexponential dependence with filling time. In this letter the electron capture kinetics is modeled, and the influence of the donor ionization factor, sample degeneracy, and size effects, are introduced. Capture barrier energy determination is discussed, and a comparison with experimental capture data is made.
10 citations