Publisher Summary A refractive index can be increased by ion implantation by changes in density and structure, by the addition of high-polarizability impurity ions, by a reduction of the plasma effect that increases the index and that is most important in the wavelength region far from the energy gap, and by absorption changing in the index in the region of the gap, that is, via the Kramers–Kronig relation. This chapter discusses the optical properties of implanted semiconductors, electrooptic components formed by ion implantation, general principles that determine most luminescent systems, effects of implantation temperature, luminescence centers in LiF-Mg-Ti radiation dosimeters, and use of line spectra in defect studies. In the LiF system, the luminescence bands are broad, and if alternative versions of the same complex exist, they cannot be resolved from the spectra. The addition, by implantation, of ions with incomplete inner electron shells opens up new possibilities as the lattice distortions of the free-ion energy levels are strongly perturbed by the defects in the neighborhood of the ion.

Optical Effects of Ion Implantation

Giant and isotropic magnetoresistance as huge as −53% was observed in magnetic manganese oxide La0.72Ca0.25MnOz films with an intrinsic antiferromagnetic spin structure. We ascribe this magnetoresistance to spin‐dependent electron scattering due to spin canting of the manganese oxide.

31p-S-4 Giant Magnetoresistance in Magnetic Manganese Oxide with Intrinsic Antiferromagnetic Spin Structure

This updated version of the popular handbook further explains all aspects of physical vapor deposition (PVD) process technology from the characterizing and preparing the substrate material, through deposition processing and film characterization, to post-deposition processing. The emphasis of the new edition remains on the aspects of the process flow that are critical to economical deposition of films that can meet the required performance specifications, with additional information to support the original material. The book covers subjects seldom treated in the literature: substrate characterization, adhesion, cleaning and the processing. The book also covers the widely discussed subjects of vacuum technology and the fundamentals of individual deposition processes. However, the author uniquely relates these topics to the practical issues that arise in PVD processing, such as contamination control and film growth effects, which are also rarely discussed in the literature. In bringing these subjects together in one book, the reader can understand the interrelationship between various aspects of the film deposition processing and the resulting film properties. The author draws upon his long experience with developing PVD processes and troubleshooting the processes in the manufacturing environment, to provide useful hints for not only avoiding problems, but also for solving problems when they arise. He uses actual experiences, called 'war stories', to emphasize certain points. Special formatting of the text allows a reader who is already knowledgeable in the subject to scan through a section and find discussions that are of particular interest. The author has tried to make the subject index as useful as possible so that the reader can rapidly go to sections of particular interest. Extensive references allow the reader to pursue subjects in greater detail if desired. The book is intended to be both an introduction for those who are new to the field and a valuable resource to those already in the field. The discussion of transferring technology between R&D and manufacturing provided in Appendix 1, will be of special interest to the manager or engineer responsible for moving a PVD product and process from R&D into production. Appendix 2 has an extensive listing of periodical publications and professional societies that relate to PVD processing. The extensive Glossary of Terms and Acronyms provided in Appendix 3 will be of particular use to students and to those not fully conversant with the terminology of PVD processing or with the English language. This title is fully revised and updated to include the latest developments in PVD process technology. It includes 'War stories' drawn from the author's extensive experience emphasize important points in development and manufacturing. Appendices include listings of periodicals and professional societies, terms and acronyms, and material on transferring technology between R&D and manufacturing.

Handbook of physical vapor deposition (PVD) processing

Carbide and Nitride Overlayers on Early Transition Metal Surfaces: Preparation, Characterization, and Reactivities.

Ion beam assisted deposition, the bombardment of a thin film with a beam of energetic particles during deposition, provides a powerful technique for modifying the microstructure and properties of thin films and coatings. Various experimental approaches used for ion beam assisted deposition are described and the physical basis for the effects is examined. Observations on modification of nucleation and growth behaviour, microstructure development, compound synthesis, and applications to the modification of properties such as intrinsic stress, adhesion, surface mechanical properties, corrosion and oxidation resistance, optical properties, and electrical properties, are reviewed.

Use of ion beam assisted deposition to modify the microstructure and properties of thin films

The rugate filter employs a sinusoidal refractive index depth profile to produce high reflection in a narrow band of wavelengths. Fabrication relies on a continuously variable index of refraction in the wavelength regime of interest. The near IR refractive index of amorphous silicon–nitrogen films decreases continuously as the composition varies from pure silicon to stoichiometric silicon nitride (Si3N4). Ion implantation was found unsuitable as a fabrication method for rugate filters. Homogeneous and inhomogeneous films up to 5 μm in thickness have been produced by simultaneous deposition of electron beam evaporated silicon and of energetic nitrogen particles arising from an ion beam. The relative fluxes of beam and evaporant are found to determine the ratio of nitrogen to silicon in the films and therefore to determine the index. Single-band reflection filters of the rugate design of high peak optical density were fabricated under computer control using a quartz crystal oscillator shielded from the beam to monitor the silicon evaporation and three suppressed Faraday cups to monitor the ion beam current.

Near infrared rugate filter fabrication by ion beam assisted deposition of Si((1-x))N(x) films.

An ion‐beam‐assisted‐deposition (IBAD) system is under development to fabricate Si1−x Nx films for optical devices. Reproducible film composition requires characterization of the relationship between the incorporated nitrogen atom fraction x and the real time experimental measurable quantities. In this paper a simple model is presented which relates the film composition x to the measured beam current density JF , the vapor impingement rate Q, and the chamber pressure p. Effects included in the model are reflection of energetic particles, sputtering from the film surface, and charge exchange neutralization of the ions. Each term in the model is examined as a potential source of both systematic and random deviations of the data from the model. Data on film composition as a function of the nitrogen ion current to deposition rate ratio are presented for several sets of ion source voltages and chamber pressures. It is shown that by modifying the deposition system so as to minimize the identified sources of err...

Fundamentals of ion‐beam‐assisted deposition. I. Model of process and reproducibility of film composition

A method is given to obtain an absolute calibration of the ion and evaporant fluxes in an ion‐beam‐assisted deposition system based upon a Kaufman ion source and an electron beam vapor source. The nitrogen‐ion silicon‐vapor material system is used for the calibration; Rutherford backscattering is used for measurement of composition and thickness of Si1−x Nx films deposited on C and Si substrates. It is shown that quantitative predictions of the ion‐to‐atom impingement ratio, film composition, and film thickness can be obtained when sputtering, reflection, charge exchange neutralization of the ions, and species content of the nitrogen beam are considered.

Fundamentals of ion‐beam‐assisted deposition. II. Absolute calibration of ion and evaporant fluxes

Characterization of a 3 cm Kaufman ion source with nitrogen feed gas

A series of molybdenum nitride films was synthesized by electron beam evaporative deposition of molybdenum, with simultaneous bombardment by nitrogen ions from a Kaufman ion source. The nitrogen ions were accelerated to 500 or 1000eV. The film compositions and structures were determined using Rutherford backscattering spectrometry and X-ray diffraction respectively. Effective reflection and sputtering coefficients for nitrogen incident on the molybdenum nitride surfaces were extracted from the data. These coefficients were used to calibrate the deposition system and allowed the deposition of molybdenum nitride films with control of the nitrogen atom concentration to ±2.3 at.%. In general, the films were polycrystalline with a high degree of texturing. The phases found in order of increasing measured nitrogen content were as follows: ‘1-Mo2N(f.c.c.), /3-Mo16N7(b.c.t.), Bi-MoN (f.c.c.) then 8-MoN (h.c.p.).

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E.P. Donovan

Papers

Near infrared rugate filter fabrication by ion beam assisted deposition of Si((1-x))N(x) films.

Fundamentals of ion‐beam‐assisted deposition. I. Model of process and reproducibility of film composition

Fundamentals of ion‐beam‐assisted deposition. II. Absolute calibration of ion and evaporant fluxes

Characterization of a 3 cm Kaufman ion source with nitrogen feed gas

Ion-beam-assisted deposition of molybdenum nitride films