The de Haas-van Alphen effect has been studied, using a vibrating sample magnetometer in samples of heavily doped n type InSb having carrier concentrations in the range approximately 1023 to 2*1024 m-3. The theory of the dHvA effect in the high field (low phase) regime has been considered. The measured Dingle (scattering) temperatures are found to be appreciably enhanced by phase smearing arising from inhomogeneities in the carrier concentration. The extent of the inhomogeneity has been determined and values of up to approximately 20% have been found. Electronic lifetimes deduced from the dHvA effect measurements are in satisfactory agreement with a Born approximation calculation of scattering by ionized impurities.

The lifetime of electrons in InSb, studied using the de Haas-van Alphen effect

Spatial fluctuations of carrier density in n type GaxIn1−xSb determined by SH-DH effect

A vibrating sample magnetometer was used to study the de Haas-van Alphen effect in degenerate n-type InSb samples with carrier concentration in the range 6*1021 to 2*1023m-3, and in two degenerate n-type InAs samples with carrier concentrations 4*1022 and 4.5*1023m-3. The carrier scattering lifetime was obtained for all the samples and is compared with a Born approximation calculation of the scattering by ionized impurities. Measurements were made in a number of the samples of the carrier cyclotron mass, which are compared with the band structure, and of the phase and amplitude of the oscillations, which are compared with the Lifshitz-Kosevich theoretical formula.

E. R. Gertner

Papers

de Haas—van Alphen Effect in n InSb