Carrier transport can significantly affect the high-speed properties of quantum-well lasers. The authors have developed a model and derived analytical expressions for the modulation response, resonance frequency, damping rate, and K factor to include these effects. They show theoretically and experimentally that carrier transport can lead to significant low-frequency parasitic-like rolloff that reduces the modulation response by as much as a factor of six in quantum-well lasers. They also show that, in addition, it leads to a reduction in the effective differential gain and thus the resonance frequency, while the nonlinear gain compression factor remains largely unaffected by it. The authors present the temperature dependence data for the K factor as further evidence for the effects of carrier transport. >

High speed quantum-well lasers and carrier transport effects

The reported wide variations in the damping behavior of quantum well lasers are explained by a novel theory of nonlinear gain, well-barrier hole burning. In the model a spatial hole develops perpendicular to the active region involving carriers moving between the wells and the barrier/confinement layers. The modified rate equations describing well-barrier hole burning are presented. An analytical approximation for the nonlinear gain coefficient epsilon , valid only under certain conditions, is given. A numerical solution is given for the case of high photon densities and large capture-times. It is shown how well-barrier hole burning explains the measurements of the increased spontaneous emission from the barrier/confinement region above threshold. Various higher-than-expected damping rates reported in some quantum well lasers are shown to be consistent with the model. >

Well-barrier hole burning in quantum well lasers

The two-dimensional (2-D) quantum-well (QW) laser diode simulator Minilase-II is presented in detail. This simulator contains a complete treatment of carrier dynamics including bulk transport, quantum carrier capture, spectral hole burning, and quantum carrier heating. The models used in the simulator and their connectivity are first presented. Then the simulator is used to demonstrate the effects of various nonlinear processes occurring in QW lasers. Finally, modulation responses produced by Minilase-II are compared directly with experimental data, showing good quantitative agreement.

Simulation of carrier transport and nonlinearities in quantum-well laser diodes

The influence of both compressive and tensile strain on semiconductor lasers and optical amplifiers is reevaluated in the light of recent experimental and theoretical work. Strain reduces the three-dimensional symmetry of the lattice and helps match the wave functions of the holes to the one-dimensional symmetry of the laser beam. It can also decrease the density of states at the valence band maximum and so reduce the carrier density required to reach threshold. These two effects appear to adequately explain the TE and TM gain in compressive and tensile structures, including polarization-independent amplifiers, the behavior of visible lasers and the improved frequency characteristics of InGaAs/GaAs lasers. In 1.5 /spl mu/m InGaAsP/InP lasers phonon-assisted Auger recombination appears to remain the dominant current path and can explain why the temperature sensitivity parameter to remains >

Band-structure engineering in strained semiconductor lasers

In this paper, the basic principle of operation, design issues, limitations, recent developments and emerging research trends on wide-bandwidth lasers and modulators for radio-frequency photonic applications are reviewed. The topics covered are wide-bandwidth lasers, lumped and traveling-wave electroabsorption modulators, traveling-wave LiNbO/sub 3/, GaAs, and polymer modulators.

Wide-bandwidth lasers and modulators for RF photonics

The beat spectra between the adjacent modes of a semiconductor laser having no external cavity are reported. Passive beat-frequency locking is observed at high power without a saturable absorber. This self-induced locking is manifested by the dramatic narrowing (by four orders of magnitude) of the beat spectrum between the dominant and adjacent modes. It is accompanied by the transition from nearly single-mode behavior to a highly structured multifrequency optical spectrum. >

Observation of mode beating and self-frequency locking in a nearly single-mode semiconductor laser

For the first time, the beat spectra between adjacent modes of a nearly single-mode semiconductor laser are measured. Self-locking processes are observed, indicating the importarce of three-mode interactions. Measurements of the laser linewidth and relative intensity noise are also presented.

http://ieeexplore.ieee.org/iel5/6179/16501/00763659.pdf

E.S. Koteles

Papers

Well-barrier hole burning in quantum well lasers

Observation of mode beating and self-frequency locking in a nearly single-mode semiconductor laser

Three-mode coupling and intensity noise in nearly single-mode semiconductor lasers

A novel mechanism for nonlinear gain in quantum-well lasers

Fabry-Perot InGaAs/GaAs Lasers with Low Noise and Narrow Linewidth