This invention discloses a customizable logic array including an array of programmable cells having a multiplicity of inputs and a multiplicity of outputs; and customized interconnections providing permanent direct interconnections among at least a plurality of the multiplicity of inputs and at least a plurality of the multiplicity of outputs.

Customizable and programmable cell array

A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.

System comprising a semiconductor device and structure

A device comprising semiconductor memories, the device comprising: a first layer and a second layer of layer-transferred mono-crystallized silicon, wherein the first layer comprises a first plurality of horizontally-oriented transistors; wherein the second layer comprises a second plurality of horizontally-oriented transistors; and wherein the second plurality of horizontally-oriented transistors overlays the first plurality of horizontally-oriented transistors.

Semiconductor device and structure

A method to process an Integrated Circuit device including processing a first layer of first transistors, then processing a first metal layer overlaying the first transistors and providing at least one connection to the first transistors, then processing a second metal layer overlaying the first metal layer, then processing a second layer of second transistors overlaying the second metal layer, wherein the second metal layer is connected to provide power to at least one of the second transistors.

Method for fabrication of a semiconductor device and structure

A programmable memory cell comprised of a transistor located at the crosspoint of a column bitline and a row wordline is disclosed. The transistor has its gate formed from the column bitline and its source connected to the row wordline. The memory cell is programmed by applying a voltage potential between the column bitline and the row wordline to produce a programmed p+ region to form a p-n diode in the substrate underlying the gate of the transistor. Further, the wordline is formed from a buried diffusion N+ layer while the column bitline is formed from a counterdoped polysilicon layer.

High density semiconductor memory cell and memory array using a single transistor and having counter-doped poly and buried diffusion wordline

An apparatus includes an FPGA, which includes a first FPGA tile including a plurality of FGs, a first, second, and third set of routing conductors, and a plurality of IGs. The FGs are arranged in rows and columns with each FG being configured to receive tertiary and regular input signals, perform a logic operation, and generate regular output signals. The third set of routing conductors is coupled to the first set of output ports of the FGs and configured to receive signals, route signals within the FPGA tile, and provide input signals to the third set of input ports of the FGs. The IGs surround the FGs such that one IG is positioned at each end of each row and column. Each IG is coupled to the third set of routing conductors and configured to transfer signals from the third set of routing conductors to outside the first FPGA tile.

Tileable field-programmable gate array architecture

An integrated circuit (IC) includes both a field-programmable gate array (FPGA) and a hard array (HA). The FPGA includes a first set of functional groups that each include an underlying logic structure and memory cells for programming the underlying logic structure, a first set of routing buses, and a first set of routing interconnect areas that provide interconnections between the first set of functional groups and the first set of routing buses. The first set of routing interconnect areas includes transistors and memory cells for programming the interconnections. The HA includes a second set of functional groups that is equal in number to the first set of functional groups and that are arranged like the first set of functional groups. Each functional group in the second set of functional groups includes an underlying logic structure that is like the underlying logic structure of the first set of functional groups but which does not include memory cells for programming the underlying logic structure. The HA also includes a second set of routing buses that are arranged like the first set of routing buses and a second set of routing interconnect areas that are arranged like the first set of routing interconnect areas but which do not include transistors and memory cells for programming interconnections.

Integrated circuit that includes a field-programmable gate array and a hard gate array having the same underlying structure

A field-programmable gate array (FPGA) having an array of RAM memory cells comprising at least one row of RAM memory cells, each RAM cell of the at least one row of RAM memory cells coupled to a row driver line; a row decoder coupled to a first end of the row driver line of each at least one row of RAM memory cells. A monitoring memory cell is coupled to a row driver line. Each monitoring memory cell is also coupled to a memory writing line. An FPGA also has RAM memory cells that act as the programming mechanism. The FPGA further has erase circuitry for clearing the RAM memory cells for reprogramming of the FPGA. The FPGA is erased by providing at least one monitoring memory cell coupled to the erase circuitry. A memory clear phase is initiated on at least one monitoring memory cell. The monitoring memory cell then indicts the cell has been cleared.

Method and apparatus of memory clearing with monitoring RAM memory cells in a field programmable gated array

A field-programmable gate array (FPGA), comprising: a first FPGA tile, the first FPGA tile comprising a plurality of functional groups (FGs), a regular routing structure, and a plurality of interface groups (IGs). The plurality of FGs are arranged in rows and columns with each of the FGs being configured to receive regular input signals, perform a logic operation, and generate regular output signals. The regular routing structure is coupled to the FGs and configured to receive the regular output signals, route signals within the first FPGA tile, and provide the regular input signals to the FGs. The plurality of IGs surround the plurality of FGs such that one IG is positioned at each end of each row and column. Each of the IGs is coupled to the regular routing structure and configured to transfer signals from the regular routing structure to outside of the first FPGA tile. The first FPGA tile also comprising a secondary routing structure independent of the regular routing structure, coupled to each of the IGs, configured to transfer signals from said first FPGA tile to at least one other FPGA tile. The disclosed apparatus also provides for a routing structure between IGs and RAM blocks. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understand that it will not be used to interpret or limit the scope or meaning of the claims.

Routing structures for a tileable field-programmable gate array architecture

A method of making an integrated circuit (IC) includes establishing an initial design for a field-programmable gate array (FPGA) to be included in the IC that includes programmable connections that can be programmed to implement a desired function; establishing an underlying physical template for the IC wherein at least a portion of the template is based on the initial design for the FPGA; selecting a specific configuration of the programmable connections in the FPGA; performing a manufacturing process of the IC using the underlying physical template, and, during the manufacturing process of the IC, bypassing selected on-state transistors in the FPGA used to implement the specific configuration of the programmable connections with metal connections while conserving the underlying physical template. An IC includes a semiconductor substrate and an FPGA fabricated on the semiconductor substrate. The FPGA has a final design that is based on an initial design contemplated by at least a portion of an underlying physical template used for making the IC. The initial design includes programmable connections that can be programmed to implement a desired function and the final design implements a specific configuration of the programmable connections of the initial design. The FPGA includes a plurality of transistors configured to implement the programmable connections of the initial design, and metal connections configured to bypass selected ones of the plurality of transistors as part of implementing the final design.

Eddy C. Huang

Papers

Tileable field-programmable gate array architecture

Integrated circuit that includes a field-programmable gate array and a hard gate array having the same underlying structure

Method and apparatus of memory clearing with monitoring RAM memory cells in a field programmable gated array

Routing structures for a tileable field-programmable gate array architecture

Final design method of a programmable logic device that is based on an initial design that consists of a partial underlying physical template