E
Edmundo da Silva Braga
Researcher at State University of Campinas
Publications - 50
Citations - 338
Edmundo da Silva Braga is an academic researcher from State University of Campinas. The author has contributed to research in topics: Amorphous solid & Reactive-ion etching. The author has an hindex of 9, co-authored 50 publications receiving 323 citations.
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Fabrication of sharp silicon tips employing anisotropic wet etching and reactive ion etching
TL;DR: A process to obtain sharper silicon tips by employing anisotropic etching in a KOH solution followed by SF6 plasma etch was developed and an increase in the figure of merit by a factor of three was found in relation to the tips before sharpening.
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Recording different geometries of 2D hexagonal photonic crystals by choosing the phase between two-beam interference exposures
TL;DR: A method for controlling the phase shift is proposed, and it is demonstrated that three different lattice geometries of hexagonal photonic crystals can be recorded when the phase is chosen.
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Structural characterization of transparent semiconducting thin films of SnO2 and In2O3
TL;DR: The structural properties of optically transparent electrically conducting thin films of SnO 2 and of In 2 O 3 deposited onto amorphous substrates and onto monocrystalline silicon substrates were studied by X-ray diffraction as mentioned in this paper.
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Simulation of the enhancement factor from an individual 3D hemisphere-on-post field emitter by using finite elements method.
Davi Sabbag Roveri,G.M. Sant’Anna,Hilton Henrique Bertan,Juliano Fujioka Mologni,Marco Antonio Robert Alves,Edmundo da Silva Braga +5 more
TL;DR: This investigation allowed demonstrating that the ratio between G and the emitter height (h) is a reliable reference for a broad range of emitter dimensions; furthermore, results permitted establishing G/h ≥ 2.2 as the threshold condition for setting the anode without affecting γ.
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CF4 plasma etching of materials used in microelectronics manufacturing
TL;DR: Amorphous hydrogenated carbon a-C:H films, deposited on silicon substrates by radio frequency plasmaenhanced chemical vapor deposition (RF PECVD), and AZw 5214 organic photoresist have been etched in a low-pressure and high frequency tetrafluoromethane (CF4) plasma as discussed by the authors.