We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...

Band parameters for nitrogen-containing semiconductors

During the past decade, computer simulations based on a quantum-mechanical description of the interactions between electrons and between electrons and atomic nuclei have developed an increasingly important impact on solid-state physics and chemistry and on materials science—promoting not only a deeper understanding, but also the possibility to contribute significantly to materials design for future technologies. This development is based on two important columns: (i) The improved description of electronic many-body effects within density-functional theory (DFT) and the upcoming post-DFT methods. (ii) The implementation of the new functionals and many-body techniques within highly efficient, stable, and versatile computer codes, which allow to exploit the potential of modern computer architectures. In this review, I discuss the implementation of various DFT functionals [local-density approximation (LDA), generalized gradient approximation (GGA), meta-GGA, hybrid functional mixing DFT, and exact (Hartree-Fock) exchange] and post-DFT approaches [DFT + U for strong electronic correlations in narrow bands, many-body perturbation theory (GW) for quasiparticle spectra, dynamical correlation effects via the adiabatic-connection fluctuation-dissipation theorem (AC-FDT)] in the Vienna ab initio simulation package VASP. VASP is a plane-wave all-electron code using the projector-augmented wave method to describe the electron-core interaction. The code uses fast iterative techniques for the diagonalization of the DFT Hamiltonian and allows to perform total-energy calculations and structural optimizations for systems with thousands of atoms and ab initio molecular dynamics simulations for ensembles with a few hundred atoms extending over several tens of ps. Applications in many different areas (structure and phase stability, mechanical and dynamical properties, liquids, glasses and quasicrystals, magnetism and magnetic nanostructures, semiconductors and insulators, surfaces, interfaces and thin films, chemical reactions, and catalysis) are reviewed. © 2008 Wiley Periodicals, Inc. J Comput Chem, 2008

Ab-initio simulations of materials using VASP: Density-functional theory and beyond.

We report a non-Pb piezoelectric ceramic system Ba(Ti(0.8)Zr(0.2))O(3)-(Ba(0.7)Ca(0.3))TiO(3) which shows a surprisingly high piezoelectric coefficient of d(33) approximately 620 pC/N at optimal composition. Its phase diagram shows a morphotropic phase boundary (MPB) starting from a tricritical triple point of a cubic paraelectric phase (C), ferroelectric rhombohedral (R), and tetragonal (T) phases. The high piezoelectricity of the MPB compositions stems from the composition proximity of the MPB to the tricritical triple point, which leads to a nearly vanishing polarization anisotropy and thus facilitates polarization rotation between 001T and 111R states. We predict that the single-crystal form of the MPB composition of the present system may reach a giant d(33) = 1500-2000 pC/N. Our work may provide a new recipe for designing highly piezoelectric materials (both Pb-free and Pb-containing) by searching MPBs starting from a TCP.

Large Piezoelectric Effect in Pb-Free Ceramics

This review covers important advances in recent years in the physics of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film form. The authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this the review covers the enormous progress that has been made in the first-principles computational approach to understanding ferroelectrics. The authors then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, this review ends with a look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in nonconventional nanoscale geometries.

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Physics of thin-film ferroelectric oxides

The conduction band minimum formation of GaAs{sub 0.5{minus}y}P{sub 0.5{minus}y}N{sub 2y} is investigated for small nitrogen compositions (0.1% < 2y < 1.0%), by using a pseudopotential technique. This formation is caused by two unusual processes both involving the deep-gap impurity level existing in the dilute alloy limit y {r_arrow} 0. The first process is an anticrossing with the {Gamma}{sub Ic}-like extended state of GaAs{sub 0.5}P{sub 0.5}. The second process is an interaction with other impurity levels forming a subband. These two processes are expected to occur in any alloys exhibiting a deep-gap impurity level at one of its dilute limit.

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The unusual conduction band minimum formation of Ga(As{sub 0.5{minus}y}P{sub 0.5{minus}y}N{sub 2y}) alloys

We propose the concept of a photonic band-gap (PBG) prism based on two-dimensional PBG structures and realize it in the millimeter-wave spectral regime We recognize the highly nonlinear dispersion of PBG materials near Brillouin zone edges and utilize the dispersion to achieve strong prism action Such a PBG prism is very compact if operated in the optical regime, ~20 mm in size for lambda ~ 700 nm, and can serve as a dispersive element for building ultracompact miniature spectrometers

Highly dispersive photonic band-gap prism

An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In x Ga 1−x As 1−y N y with 0 70%.

InGaAsN/GaAs heterojunction for multi-junction solar cells

${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{As}}_{1\ensuremath{-}y}{\mathrm{N}}_{y}$ is a semiconductor alloy system with the remarkable property that the inclusion of only 2% nitrogen reduces the band gap by more than 30%. In order to help understand the physical origin of this extreme deviation from the typically observed nearly linear dependence of alloy properties on concentration, we have investigated the pressure dependence of the excited state energies using both experimental and theoretical methods. We report measurements of the low-temperature photoluminescence of the material for pressures between ambient and 110 kbar. We also describe a density-functional-theory-based approach to calculating the pressure dependence of low lying excitation energies for low-concentration alloys. The theoretically predicted pressure dependence of the band gap is in excellent agreement with the experimental data. Based on the results of our calculations, we suggest an explanation for the strongly nonlinear pressure dependence of the band gap that, surprisingly, does not involve a nitrogen impurity band.

Band structure of In x Ga 1-x As 1-y N y alloys and effects of pressure

The present invention describes the use of photonic crystals to form optical elements which function in optical apparatus in frequency ranges outside photonic band-gaps. Such optical elements may apply such optical properties as dispersion, anisotropy, and birefringence (all of which are exhibited by photonic crystals outside photonic band-gaps). A variety of optical apparatus, including spectrometers, radiation sources, and lasers are enabled by such optical elements.

Eric D. Jones

Papers

The unusual conduction band minimum formation of Ga(As{sub 0.5{minus}y}P{sub 0.5{minus}y}N{sub 2y}) alloys

Highly dispersive photonic band-gap prism

InGaAsN/GaAs heterojunction for multi-junction solar cells

Band structure of In x Ga 1-x As 1-y N y alloys and effects of pressure

Optical elements comprising photonic crystals and applications thereof