The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates. Today, a silicon chip the size of a fingernail contains nearly 1 billion transistors and has the computing power that only a decade ago would take up an entire room of servers. As the relentless pursuit of Moore's law continues, and Internet-based communication continues to grow, the bandwidth demands needed to feed these devices will continue to increase and push the limits of copper-based signaling technologies. These signaling limitations will necessitate optical-based solutions. However, any optical solution must be based on low-cost technologies if it is to be applied to the mass market. Silicon photonics, mainly based on SOI technology, has recently attracted a great deal of attention. Recent advances and breakthroughs in silicon photonic device performance have shown that silicon can be considered a material onto which one can build optical devices. While significant efforts are needed to improve device performance and commercialize these technologies, progress is moving at a rapid rate. More research in the area of integration, both photonic and electronic, is needed. The future is looking bright. Silicon photonics could provide low-cost opto-electronic solutions for applications ranging from telecommunications down to chip-to-chip interconnects, as well as emerging areas such as optical sensing technology and biomedical applications. The ability to utilize existing CMOS infrastructure and manufacture these silicon photonic devices in the same facilities that today produce electronics could enable low-cost optical devices, and in the future, revolutionize optical communications

http://ieeexplore.ieee.org/iel5/6668/34347/01638290.pdf

Silicon photonics

The ability to confine and control light in three dimensions would have important implications for quantum optics and quantum-optical devices: the modification of black-body radiation, the localization of light to a fraction of a cubic wavelength, and thus the realization of single-mode light-emitting diodes, are but a few examples1,2,3. Photonic crystals — the optical analogues of electronic crystal — provide a means for achieving these goals. Combinations of metallic and dielectric materials can be used to obtain the required three-dimensional periodic variations in dielectric constant, but dissipation due to free carrier absorption will limit application of such structures at the technologically useful infrared wavelengths4. On the other hand, three-dimensional photonic crystals fabricated in low-loss gallium arsenide show only a weak ‘stop band’ (that is, range of frequencies at which propagation of light is forbidden) at the wavelengths of interest5. Here we report the construction of a three-dimensional infrared photonic crystal on a silicon wafer using relatively standard microelectronics fabrication technology. Our crystal shows a large stop band (10–14.5 μm), strong attenuation of light within this band (∼12 dB per unit cell) and a spectral response uniform to better than 1 per cent over the area of the 6-inch wafer.

A three-dimensional photonic crystal operating at infrared wavelengths

This review presents an extensive discussion on the major advances in the field of periodically organized mesoporous thin films (POMTFs) obtained via surfactant templated growth of inorganic or hybrid polymers. A large variety of templating agents can be coupled with inorganic polymerization reactions for the design of periodically organized nanostructured hybrid phases that yield POMTFs. The tuning of the interface between the template and the polymerizing phase and the control over chemical and processing conditions are the key parameters in producing tailor-made POMTFs with a high degree of reproducibility. This dynamic coupling between chemical and processing conditions dictates extensive use of complementary ex situ measurements with in situ characterization techniques that follow, in real time, film formation from the molecular precursor solutions to the final stabilized POMTF. Among modern analytical tools, 2D-GISAXS, ellipsoporosimetry, HRTEM, X-ray reflectometry, WAXS, time-resolved infrared spec...

Design, Synthesis, and Properties of Inorganic and Hybrid Thin Films Having Periodically Organized Nanoporosity†

We found that self-determining collimated light is generated in a photonic crystal fabricated on silicon. The divergence of the collimated beam is insensitive to that of the incident beam and much smaller than the divergence that would be generated in conventional Gaussian optics. The incident-angle dependence of the self-collimated light propagation including lens-like divergent propagation was interpreted in terms of the highly modulated dispersion surfaces with inflection points, where the curvature changes from downward to upward corresponding to respectively a concave/convex-lens case. This demonstration is an important step towards controlling beam profile in photonic crystal integrated light circuits and towards developing “photonic crystalline optics.”

Self-collimating phenomena in photonic crystals

After dominating the electronics industry for decades, silicon is on the verge of becoming the material of choice for the photonics industry: the traditional stronghold of III-V semiconductors. Stimulated by a series of recent breakthroughs and propelled by increasing investments by governments and the private sector, silicon photonics is now the most active discipline within the field of integrated optics. This paper provides an overview of the state of the art in silicon photonics and outlines challenges that must be overcome before large-scale commercialization can occur. In particular, for realization of integration with CMOS very large scale integration (VLSI), silicon photonics must be compatible with the economics of silicon manufacturing and must operate within thermal constraints of VLSI chips. The impact of silicon photonics will reach beyond optical communication-its traditionally anticipated application. Silicon has excellent linear and nonlinear optical properties in the midwave infrared (IR) spectrum. These properties, along with silicon's excellent thermal conductivity and optical damage threshold, open up the possibility for a new class of mid-IR photonic devices

Silicon Photonics

We propose the concept of a photonic band-gap (PBG) prism based on two-dimensional PBG structures and realize it in the millimeter-wave spectral regime We recognize the highly nonlinear dispersion of PBG materials near Brillouin zone edges and utilize the dispersion to achieve strong prism action Such a PBG prism is very compact if operated in the optical regime, ~20 mm in size for lambda ~ 700 nm, and can serve as a dispersive element for building ultracompact miniature spectrometers

Highly dispersive photonic band-gap prism

The traveling-wave photodetectors (TWPD) discussed here offer theoretical quantum efficiencies approaching 100% while maintaining a very large electrical bandwidth. Additionally, they are capable of dissipating the high-power levels required for large dynamic range applications. In this paper, the power dissipation limit of the TWPD is explored. A small-signal steady-state model is developed that includes the effects of electrical propagation losses along the detector. Fabrication details are presented and experimental data shows a 3/spl times/1250 /spl mu/m/sup 2/ detector with a 4.8-GHz bandwidth. >

Traveling-wave photodetectors for high-power, large-bandwidth applications

We have previously demonstrated record modulation bandwidths for oxide-confined vertical-cavity surface-emitting lasers (VCSELs) based on strained InGaAs/GaAs quantum wells.1

Small and large signal modulation of 850 nm oxide-confined verticai-cavity surface-emitting lasers

The present invention describes the use of photonic crystals to form optical elements which function in optical apparatus in frequency ranges outside photonic band-gaps. Such optical elements may apply such optical properties as dispersion, anisotropy, and birefringence (all of which are exhibited by photonic crystals outside photonic band-gaps). A variety of optical apparatus, including spectrometers, radiation sources, and lasers are enabled by such optical elements.

Optical elements comprising photonic crystals and applications thereof

An optical-based RF beam steering system for phased-array antennas comprising a photonic integrated circuit (PIC). The system is based on optical heterodyning employed to produce microwave phase shifting by a monolithic PIC constructed entirely of passive components. Microwave power and control signal distribution to the antenna is accomplished by optical fiber, permitting physical separation of the PIC and its control functions from the antenna. The system reduces size, weight, complexity, and cost of phased-array antenna systems.

Vincent M. Hietala

Papers

Highly dispersive photonic band-gap prism

Traveling-wave photodetectors for high-power, large-bandwidth applications

Small and large signal modulation of 850 nm oxide-confined verticai-cavity surface-emitting lasers

Optical elements comprising photonic crystals and applications thereof

Coherent optical monolithic phased-array antenna steering system