A high efficiency configuration for a solar cell module comprises solar cells arranged in a shingled manner to form super cells, which may be arranged to efficiently use the area of the solar module, reduce series resistance, and increase module efficiency.

Shingled solar cell module

A novel process for the passivation of mirror facets of Al-free active-region high-power semiconductor diode lasers is presented. Designed for technological simplicity and minimum damage generated within the facet region, it combines laser bar cleaving in air with a two-step process consisting of 1) removal of thermodynamically unstable species and 2) facet sealing with a passivation layer. Impurity removal is achieved by irradiation with beams of atomic hydrogen, while zinc selenide is used as the passivating medium. The effectiveness of the process is demonstrated by operation of 808-nm GaAsP-active ridge-waveguide diode lasers at record optical powers of 500 mW for several thousand hours limited only by bulk degradation.

Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers

A method for separating individual dies from a wafer in which the wafer is adhered to a plastic film on a film carrier with the circuit side of the wafer facing the film and with circuit components exposed through a hole in the film. In this manner, the circuitry is protected from dust, and trauma from the sawing and cleaning processes because the circuitry is sealed between the film and the non-circuit side of the wafer.

Method for separating circuit dies from a wafer

A semiconductor light emitting device ( 10 ) is provided with a base substrate ( 12 ) and three LED chips ( 14 A, 14 B, and 14 C) disposed on the base substrate ( 12 ) Each LED chip ( 14 A, 14 B, and 14 C) includes a semiconductor multilayer structure ( 20 ) and has a rhombus shape with interior angles of approximately 60° and approximately 120° in plan view Each semiconductor multilayer structure ( 20 ) has an HCP single crystal structure and includes a light emission layer ( 24 ) The LED chips ( 14 A, 14 B, and 14 C) are arranged on the base substrate ( 12 ) so as to face one another at a vertex forming the larger interior angle in plan view With this arrangement, the LED chips ( 14 A, 14 B, and 14 C) as a whole form a substantially regular hexagonal shape

Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element

A package for a high power semiconductor laser comprising a hermetically sealed container filled with a dry gaseous medium containing oxygen. The presence of oxygen in the laser atmosphere is counter to standard practice in the art which teaches the use of an atmosphere of a dry inert gas. The package also includes a getter for organic impurities, e.g., a getter composed of a porous silica or a zeolite. The hydrogen content of the materials used to form the package are reduced by baking at an elevated temperature for an extended period of time, e.g., at 150° C. for 200 hours.

Packaging of High Power Semiconductor Lasers

A method for passivating mirrors in the process of fabricating semiconductor laser diodes is disclosed. Key steps of the method are: (1) providing a contamination-free mirror facet, followed by (2) an in-situ application of a continuous, insulating (or low conductive) passivation layer. This layer is formed with material that acts as a diffusion barrier for impurities capable of reacting with the semiconductor but which does not itself react with the mirror surface. The contamination-free mirror surface is obtained by cleaving in a contamination-free environment, or by cleaving in air, followed by mirror etching, and subsequent mirror surface cleaning. The passivation layer consists of Si, Ge or Sb.

Method for mirror passivation of semiconductor laser diodes

A method for cleaving semiconductor wafers, or segments thereof, which comprises placing the wafer, provided with scribe lines defining the planes where cleaving is to take place, inbetween a pair of flexible transport bands and guiding it around a curved, large radius surface thereby applying a bending moment. With a moment of sufficient magnitude, individual bars are broken off the wafer as this is advanced, the bars having front-and rear-end facets. On cleaving, each bar, while still pressed against the curved surface, is automatically separated whereby mutual damage of the facets of neighboring bars is prevented. For further handling, e.g. for the transport of the bars to an evaporation station for passivation layer deposition, provisions are made to keep the bars separated. Cleaving and the subsequent passivation coating can be carried out in-situ in a vacuum system to prevent facet contamination prior to applying the passivation.

Method for batch cleaving semiconductor wafers and coating cleaved facets

Verfahren zur Spiegelpassivierung bei Halbleiterlaserdioden.

A method for cleaving semiconductor wafers, or segments thereof, which comprises placing the wafer (11), provided with scribe lines (15) defining the planes where cleaving is to take place, inbetween a pair of flexible transport bands (12,13) and guiding it around a curved, large radius surface (21) thereby applying a bending moment With a moment of sufficient magnitude, individual bars (22) are broken off the wafer as this is advanced, the bars having front- and rear-end facets On cleaving, each bar, while still pressed against the curved surface, is automatically separated whereby mutual damage of the facets of neighbouring bars is prevented For further handling, eg for the transport of the bars to an evaporation station for passivation layer deposition, provisions are made to keep the bars separated Cleaving and the subsequent passivation coating can be carried out in-situ in a vacuum system to prevent facet contamination prior to applying the passivation

Ernst Eberhard Dr. Latta

Papers

Method for mirror passivation of semiconductor laser diodes

Method for batch cleaving semiconductor wafers and coating cleaved facets

Verfahren zur Spiegelpassivierung bei Halbleiterlaserdioden.

Method and apparatus for batch cleaving semiconductor wafers and for coating the cleaved facets