and Applications of Fullerenes, Carbon Dots, Nanotubes, Graphene, Nanodiamonds, and Combined Superstructures Vasilios Georgakilas,† Jason A. Perman,‡ Jiri Tucek,‡ and Radek Zboril*,‡ †Material Science Department, University of Patras, 26504 Rio Patras, Greece ‡Regional Centre of Advanced Technologies and Materials, Department of Physical Chemistry, Faculty of Science, Palacky University in Olomouc, 17 listopadu 1192/12, 771 46 Olomouc, Czech Republic

Broad family of carbon nanoallotropes: classification, chemistry, and applications of fullerenes, carbon dots, nanotubes, graphene, nanodiamonds, and combined superstructures.

Transparent conducting films (TCFs) are a critical component in many personal electronic devices. Transparent and conductive doped metal oxides are widely used in industry due to their excellent optoelectronic properties as well as the mature understanding of their production and handling. However, they are not compatible with future flexible electronics developments where large-scale production will likely involve roll-to-roll manufacturing. Recent studies have shown that carbon nanotubes provide unique chemical, physical, and optoelectronic properties, making them an important alternative to doped metal oxides. This Review provides a comprehensive analysis of carbon nanotube transparent conductive films covering detailed fabrication methods including patterning of the films, chemical doping effects, and hybridization with other materials. There is a focus on optoelectronic properties of the films and potential in applications such as photovoltaics, touch panels, liquid crystal displays, and organic light-emitting diodes in conjunction with a critical analysis of both the merits and shortcomings of carbon nanotube transparent conductive films.

Recent Development of Carbon Nanotube Transparent Conductive Films

We successfully prepared QDs incorporated into a silica/alumina monolith (QDs-SAM) by a simple sol–gel reaction of an Al–Si single precursor with CsPbBr3 QDs blended in toluene solution, without adding water and catalyst. The resultant transparent monolith exhibits high photoluminescence quantum yields (PLQY) up to 90 %, and good photostability under strong illumination of blue light for 300 h. We show that the preliminary ligand exchange of didodecyl dimethyl ammonium bromide (DDAB) was very important to protect CsPbBr3 QDs from surface damages during the sol–gel reaction, which not only allowed us to maintain the original optical properties of CsPbBr3 QDs but also prevented the aggregation of QDs and made the monolith transparent. The CsPbBr3 QDs-SAM in powder form was easily mixed into the resins and applied as color-converting layer with curing on blue light-emitting diodes (LED). The material showed a high luminous efficacy of 80 lm W−1 and a narrow emission with a full width at half maximum (FWHM) of 25 nm.

Highly Luminescent and Ultrastable CsPbBr3 Perovskite Quantum Dots Incorporated into a Silica/Alumina Monolith.

Graphene is a unique and attractive energy material because of its atom-thick two-dimensional structure and excellent properties Graphene sheets are also mechanically strong and flexible Thus, graphene materials are expected to have wide and practical applications in bendable, foldable and/or stretchable devices related to energy conversion and storage We present a review on the recent advancements in flexible graphene energy devices including photovoltaic devices, fuel cells, nanogenerators (NGs), supercapacitors (SCs) and batteries, and the devices related to energy conversion such as organic light-emitting diodes (OLEDs), photodetectors and actuators The strategies for synthesizing flexible graphene materials will be summarized and the challenges facing the design and construction of the devices will be discussed

Flexible graphene devices related to energy conversion and storage

The possibility to deposit purely organic and hybrid inorganic–organic materials in a way parallel to the state-of-the-art gas-phase deposition method of inorganic thin films, i.e., atomic layer deposition (ALD), is currently experiencing a strongly growing interest. Like ALD in case of the inorganics, the emerging molecular layer deposition (MLD) technique for organic constituents can be employed to fabricate high-quality thin films and coatings with thickness and composition control on the molecular scale, even on complex three-dimensional structures. Moreover, by combining the two techniques, ALD and MLD, fundamentally new types of inorganic–organic hybrid materials can be produced. In this review article, we first describe the basic concepts regarding the MLD and ALD/MLD processes, followed by a comprehensive review of the various precursors and precursor pairs so far employed in these processes. Finally, we discuss the first proof-of-concept experiments in which the newly developed MLD and ALD/MLD processes are exploited to fabricate novel multilayer and nanostructure architectures by combining different inorganic, organic and hybrid material layers into on-demand designed mixtures, superlattices and nanolaminates, and employing new innovative nanotemplates or post-deposition treatments to, e.g., selectively decompose parts of the structure. Such layer-engineered and/or nanostructured hybrid materials with exciting combinations of functional properties hold great promise for high-end technological applications.

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Organic and inorganic-organic thin film structures by molecular layer deposition: A review.

Optimization of Al2O3/ZrO2 nanolaminate structure for thin-film encapsulation of OLEDs

Roll-to-roll preparation of silver-nanowire transparent electrode and its application to large-area organic light-emitting diodes

Low-temperature growth of In2O3 films was demonstrated at 70–250 °C by plasma-enhanced atomic layer deposition (PEALD) using a newly synthesized liquid indium precursor, dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium (Me2In(EDPA)), and O2 plasma for application to high-mobility thin film transistors. Self-limiting In2O3 PEALD growth was observed with a saturated growth rate of approximately 0.053 nm/cycle in an ALD temperature window of 90–180 °C. As-deposited In2O3 films showed negligible residual impurity, film densities as high as 6.64–7.16 g/cm3, smooth surface morphology with a root-mean-square (RMS) roughness of approximately 0.2 nm, and semiconducting level carrier concentrations of 1017–1018 cm–3. Ultrathin In2O3 channel-based thin film transistors (TFTs) were fabricated in a coplanar bottom gate structure, and their electrical performances were evaluated. Because of the excellent quality of In2O3 films, superior electronic switching performances were achieved with high field effect mo...

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application.

Water permeation through organic–inorganic multilayer thin films

We report on moisture permeation through ultrathin TiO2 barrier layers grown by atomic layer deposition (ALD). The steady-state water vapor transmission rate (WVTR) was as low as 6×10-4 g/(m2day) as determined by electrical Ca test at 60 °C and 85% relative humidity (RH). These Ca test measurement results confirmed the existence of a critical thickness at which the WVTR changes abruptly. In addition, the results revealed that the moisture permeation through the layer occurred via two distinctly different mechanisms. The time to failure of the barrier film, rather than the steady-state WVTR, was proposed in order to evaluate the barrier property more accurately.

https://iopscience.iop.org/article/10.1143/APEX.5.035701/pdf

Eun Ae Jung

Papers

Optimization of Al2O3/ZrO2 nanolaminate structure for thin-film encapsulation of OLEDs

Roll-to-roll preparation of silver-nanowire transparent electrode and its application to large-area organic light-emitting diodes

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application.

Water permeation through organic–inorganic multilayer thin films

Moisture Permeation through Ultrathin TiO2 Films Grown by Atomic Layer Deposition