We propose a universal, on-chip quantum transducer based on surface acoustic waves in piezoactive materials. Because of the intrinsic piezoelectric (and/or magnetostrictive) properties of the material, our approach provides a universal platform capable of coherently linking a broad array of qubits, including quantum dots, trapped ions, nitrogen-vacancy centers, or superconducting qubits. The quantized modes of surface acoustic waves lie in the gigahertz range and can be strongly confined close to the surface in phononic cavities and guided in acoustic waveguides. We show that this type of surface acoustic excitation can be utilized efficiently as a quantum bus, serving as an on-chip, mechanical cavity-QED equivalent of microwave photons and enabling long-range coupling of a wide range of qubits.

https://repository.tudelft.nl/islandora/object/uuid%3A7b3222a5-8e51-4ede-a4e6-dedc34e11cf6/datastream/OBJ/download

Universal Quantum Transducers based on Surface Acoustic Waves

This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at frequencies beyond 10 GHz. In the design of SAW devices on AlN/diamond systems, the thickness of the piezoelectric layer is a key parameter. The influence of the film thickness on the SAW device response has been studied. Optimized thin films combined with advanced e-beam lithographic techniques have allowed the fabrication of one-port SAW resonators with finger width and pitch of 200 nm operating in the 10-14 GHz range with up to 36 dB out-of-band rejection.

/pdf/super-high-frequency-saw-resonators-on-aln-diamond-mhrp76pywd.pdf

Super-High-Frequency SAW Resonators on AlN/Diamond

In this paper, an AlN/free-standing nanocrystalline diamond (NCD) system is proposed in order to process high frequency surface acoustic wave (SAW) resonators for sensing applications. The main problem of synthetic diamond is its high surface roughness that worsens the sputtered AlN quality and hence the device response. In order to study the feasibility of this structure, AlN films from 150 nm up to 1200 nm thick have been deposited on free-standing NCD. We have then analysed the influence of the AlN layer thickness on its crystal quality and device response. Optimized thin films of 300 nm have been used to fabricate of one-port SAW resonators operating in the 10–14 GHz frequency range. A SAW based sensor pressure with a sensibility of 0.33 MHz/bar has been fabricated.

/pdf/high-precision-pressure-sensors-based-on-saw-devices-in-the-4l5tmdcop6.pdf

High precision pressure sensors based on SAW devices in the GHz range

Acoustic devices have found wide applications in chemical and biosensing fields owing to their high sensitivity, ruggedness, miniaturized design and integration ability with on-field electronic systems. One of the potential advantages of using these devices are their label-free detection mechanism since mass is the fundamental property of any target analyte which is monitored by these devices. Herein, we provide a concise overview of high frequency acoustic transducers such as quartz crystal microbalance (QCM), surface acoustic wave (SAW) and film bulk acoustic resonators (FBARs) to compare their working principles, resonance frequencies, selection of piezoelectric materials for their fabrication, temperature-frequency dependency and operation in the liquid phase. The selected sensor applications of these high frequency acoustic transducers are discussed primarily focusing on the two main sensing domains, i.e., biosensing for working in liquids and gas/vapor phase sensing. Furthermore, the sensor performance of high frequency acoustic transducers in selected cases is compared with well-established analytical tools such as liquid chromatography mass spectrometry (LC-MS), gas chromatographic (GC) analysis and enzyme-linked immunosorbent assay (ELISA) methods. Finally, a general comparison of these acoustic devices is conducted to discuss their strengths, limitations, and commercial adaptability thus, to select the most suitable transducer for a particular chemical/biochemical sensing domain.

https://www.mdpi.com/1424-8220/19/20/4395/pdf

An Overview of High Frequency Acoustic Sensors-QCMs, SAWs and FBARs-Chemical and Biochemical Applications.

Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s−1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments.

https://iopscience.iop.org/article/10.1088/0960-1317/23/2/025019/pdf

Surface acoustic wave devices on AlN/3C-SiC/Si multilayer structures

Diamond films are very desirable for application to SAW devices because of their high acoustic wave velocity, which allows the extending of the frequency limit of operation at a given interdigital transducer line-width resolution. Use of high-quality AlN as the piezoelectric layer in conjunction with diamond is also desirable because of its high SAW velocity - the highest among all piezoelectric materials - together with its excellent electrical, mechanical, and chemical properties. The problems arising in the growth of AlN films on diamond have prevented, until now, the use of this combination of materials. In this paper we present recent results on the growth of highly oriented, low-stressed AlN films on diamond. SAW propagation on AlN/diamond has been theoretically investigated together with electromechanical coupling for both the Rayleigh and the Sezawa modes. The theoretical calculations show that high SAW velocities are achievable with good coupling efficiencies. Under proper conditions very large piezoelectric couplings are predicted k/sup 2/ = 2.2 and 4% for the Rayleigh and the Sezawa wave, respectively comparable to those observed in strongly piezoelectric single crystals such as LiNbO/sub 3/, but with SAW velocities approximately two-fold higher. Experiments performed on AIN/diamond/Si SAW test devices have shown good agreement between experimental results and theoretical predictions and demonstrate the feasibility of SAW devices based on this technology.

F. Di Pictrantonio

Papers

Growth of AlN piezoelectric film on diamond for high-frequency surface acoustic wave devices