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F. Fauzi

Researcher at Sheffield Hallam University

Publications -  17
Citations -  322

F. Fauzi is an academic researcher from Sheffield Hallam University. The author has contributed to research in topics: Cadmium telluride photovoltaics & Thin film. The author has an hindex of 9, co-authored 16 publications receiving 271 citations. Previous affiliations of F. Fauzi include Universiti Malaysia Perlis.

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High short-circuit current density CdTe solar cells using all-electrodeposited semiconductors

TL;DR: In this article, the Schottky barrier at the n-CdTe/metal back contact was used for the separation of photo-generated charge carriers, and the potential barrier heights estimated for these devices from the current-voltage characteristics exceed 1.09 eV and 1.13 eV, respectively.
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Improvement of composition of CdTe thin films during heat treatment in the presence of CdCl2

TL;DR: In this paper, the experimental evidence for improvement of composition of CdTe layers during CdCl2 treatment was reported using four selected analytical techniques; Photo-electrochemical (PEC) cell, X-ray diffraction (XRD), Raman spectroscopy and Scanning electron microscopy (SEM).
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Optimisation of CdTe electrodeposition voltage for development of CdS/CdTe solar cells

TL;DR: In this paper, the structural, electrical, optical and morphological properties of the resulting CdTe thin films have been characterized using X-ray diffraction (XRD), Photoelectrochemical (PEC) cell measurements, optical absorption spectroscopy and Scanning Electron Microscopy (SEM).
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Effects of CdCl2 treatment on deep levels in CdTe and their implications on thin film solar cells: a comprehensive photoluminescence study

TL;DR: In this paper, defect level distributions in the bandgap of CdTe thin films, used for solar cell development, were investigated using low-temperature photoluminescence.
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Electroplating of CdTe Thin Films from Cadmium Sulphate Precursor and Comparison of Layers Grown by 3-Electrode and 2-Electrode Systems

TL;DR: In this article, the results obtained from CdTe layers grown by three-electrode (3E) and two-electronde (2E) systems for their material properties and performance in CdS/CdTe devices were compared.