https://hal.archives-ouvertes.fr/hal-00120432/document

Raman Spectroscopy of Nanomaterials: How Spectra Relate to Disorder, Particle Size and Mechanical Properties

Standard electrochemical data for high-quality, boron-doped diamond thin-film electrodes are presented. Films from two different sources were compared (NRL and USU) and both were highly conductive, hydrogen-terminated, and polycrystalline. The films are acid washed and hydrogen plasma treated prior to use to remove nondiamond carbon impurity phases and to hydrogen terminate the surface. The boron-doping level of the NRL film was estimated to be in the mid 1019 B/cm3 range, and the boron-doping level of the USU films was ∼5 × 1020 B/cm-3 based on boron nuclear reaction analysis. The electrochemical response was evaluated using Fe(CN)63-/4-, Ru(NH3)63+/2+, IrCl62-/3-, methyl viologen, dopamine, ascorbic acid, Fe3+/2+, and chlorpromazine. Comparisons are made between the apparent heterogeneous electron-transfer rate constants, koapp, observed at these high-quality diamond films and the rate constants reported in the literature for freshly activated glassy carbon. Ru(NH3)63+/2+, IrCl62-/3-, methyl viologen, a...

Standard electrochemical behavior of high-quality, boron-doped polycrystalline diamond thin-film electrodes

http://www.chm.bris.ac.uk/pt/diamond/pdf/drm17-105.pdf

Raman and conductivity studies of boron-doped microcrystalline diamond, facetted nanocrystalline diamond and cauliflower diamond films

Polycrystalline diamond electrodes: basic properties and applications as amperometric detectors in flow injection analysis and liquid chromatography

Boron concentration dependence of Raman spectra on {100} and {111} facets of B-doped CVD diamond

Heavily B‐doped polycrystalline diamond films ([B]≳1019 cm−3) are studied by Raman spectroscopy and electron spin resonance. The formation of an impurity band is accompanied by a Fano‐type interference for the one‐phonon scattering. Bands at 1200 and 500 cm−1 are observed in Raman spectroscopy for concentrations above 1020 cm−3. They are related to maxima in the phonon density of states, and are ascribed to disordered regions or crystalline regions of very small size. The concentration of defects associated with the paramagnetic signal observed around g=2.0030 increases drastically above 1021 B cm−3. The Mott insulator‐metal transition is accompanied by the presence of a new paramagnetic signal (g=2.0007 for 2×1020 B cm−3, g=1.9990 for 1021 B cm−3) ascribed to free holes in the impurity band.

Characterization of heavily B‐doped polycrystalline diamond films using Raman spectroscopy and electron spin resonance

We have studied the dark conductivity (field, temperature, and frequency dependence), and the photoconductivity in undoped polycrystalline diamond films. Detailed analysis reveals that either of two alternative models can be invoked to explain all the observed features of the dark conductivity. The first model is a Hill‐type hopping conduction involving the presence of discrete acceptor states located at 0.91 eV above the valence band with a density around 1017 cm−3. The second model involves the presence of a band‐tail of acceptor states extending about 1 eV above the valence band. In this case, variable range hopping conduction dominates at low fields with a density of states at the Fermi level around 5×1015 cm−3 eV−1, while space charge limited currents dominate at high fields. The states controlling the dark conductivity give rise to photoconduction with a threshold around 0.85 eV and a peak at 1.1 eV. The shape of the photoconductivity spectrum suggests that lattice relaxation (with a Franck‐Condon shift around 0.08 eV) occurs at these states. Peaks in the photoconductivity at 1.4 eV and at 1.9 eV give evidence for the presence of deeper states in these films.

Electrical conduction and deep levels in polycrystalline diamond films

The growth rate and the incorporation efficiency of dopants have been studied in the case of chemical vapor deposition of B‐doped polycrystalline diamond films. The deposition rate is found to decrease with the addition of diborane in the gas phase. This is correlated with a modification of the plasma chemistry as observed by emission spectroscopy (decrease in the H/H2, CH/H, and C2/H ratios with the addition of diborane). The concentration of boron incorporated in the films is observed to vary with the square of the boron concentration in the gas phase.

F. Fontaine

Papers

Characterization of heavily B‐doped polycrystalline diamond films using Raman spectroscopy and electron spin resonance

Electrical conduction and deep levels in polycrystalline diamond films

Chemical vapor deposition of B‐doped polycrystalline diamond films: Growth rate and incorporation efficiency of dopants

Conduction mechanisms in boron implanted diamond films

Reality of doping by boron implantation of CVD polycrystalline diamond from a comparison of Raman and electrical measurements