A monolithic balanced traveling-wave amplifier stage using GaAs MESFET's is demonstrated. The amplifier achieves 7-9-dB gain with about 40-ps risetime and a -3-dB bandwidth of 12 GHz, on a 0.91 X0.97-mm die. Its gain versus frequency is very flat, and |S/sub 11/|, |S/sub 12/|, and |S/sub 22/| are less than 0.2 from 0-18 GHz. S-parameter uniformity and yield data are measured on-wafer with a special hybrid wafer probe.

A DC-12 GHz Monolithic GaAsFET Distributed Amplifier

A monolithic balanced traveling-wave amplifier stage using GaAs MESFET's is demonstrated. This amplifier achieves 7-9-dB gain with about 40-ps risetime and a -3-dB bandwidth of 12 GHz, on a 0.91 × 0.97-mm die. Its gain versus frequency is very flat, and |S 11 |, |S 12 |, and |S 22 | are less than 0.2 from 0-18 GHz. S-parameter uniformity and yield data are measured on-wafer with a special hybrid wafer probe.

A DC-12 GHz monolithic GaAsFET distributed amplifier

The analysis takes into consideration the effect of c/sub dg/ in the active device, leading to a coupled-mode formulation. Dispersions within the transmission lines and the presence of two normal modes make it impractical to obtain broadband matching. Numerical results for specific terminations and various degrees of passive and active coupling clearly indicate the influence of c/sub dg/ and the necessity for coupled-mode analysis. The numerical scheme, which is based on Bromwich integration, can be incorporated into CAD routines for time-domain response optimization. >

Coupled-wave small-signal transient analysis of GaAs distributed amplifier

In current applications such as communication, aerospace and defense, electronic warfare (EW), electromagnetic compatibility (EMC), and sensing, among others, there is an ever-growing demand for more linear power with increasingly greater bandwidth and efficiency. Critical for these applications are the design and packaging of wide-band, high-power amplifiers that are both compact in size and low in cost [1]. Most such applications, including EW, radar, and EMC testers, require high 1-dB compression point (P1dB) power with good linearity across a wide band (multi-octave to decade bandwidth) [2]. In addition to linear power, wide bandwidth is essential for high-data-rate communication and high resolution in radar and active imagers [3]. In modern electronics equipment such as automated vehicles, rapidly increasing complexity imposes strict EMC regulations for human safety and security [4]. This often requires challenging specifications for the power amplifier (PA), such as very high P1dB power [to kilowatt, continuous wave (CW)] across approximately a decade bandwidth with high linearity, reliability, and long life, even for 100% load mismatch [5].

Designing and Packaging Wide-Band PAs: Wideband PA and Packaging, History, and Recent Advances: Part 1

Two photon counters with variable dead times are described, one of simple design which is suited for low count rates and the other for system dead times down to 2 ns. Cheap, well‐known components are used and the counters were designed by computer aid with a criterion that circuit performance be relatively insensitive to component values. An example of PCB layout is presented.

Photon counting circuits

In order to build a gigabit/second pulse amplifier for medium power applications a new transistor-distributed amplifier configuration was developed and tested. A five-section amplifier employing 5 GHz f/SUB T/ bipolar transistors has a frequency response from DC to 3.6 GHz. Results achieved were a 10 dB gain, 130 ps step response rise time, and a amplitude of 4 V peak to peak across a 50 /spl Omega/ load.

F. Meyer

Papers

Wide-band pulse amplifier